Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Tae-Won Jeong

Jin-Young Kim

Jeong-hee Lee

Se-gi Yu

Whi-kun Yi

Jung-Na Heo

Chang-soo Lee

Sang-Hyun Lee

Young-jun Park

Yong-wan Jin

Jeong-na Heo

Jong-min Kim

Yong-Chul Kim

Il-Hwan Kim

Do-Yoon Kim

Shang-Hyeun Park

Ji-beom Yoo

Won-Seok Kim

Jeong-Na Huh

Hee-Tae Jung

Young-Koan Ko

A method of fabricating spacers for use in a flat panel device includes: preparing a core glass having a low solubility in a chemical etching solution and a tube glass having a high solubility in the chemical etching solution and having a larger inner diameter than an outer diameter of the core glass; inserting the core glass into the tube glass to obtain a cylindrical glass; drawing the cylindrical glass at a predetermined temperature until the core glass has a predetermined diameter; cutting the drawn cylindrical glass to a predetermined length; and removing the tube glass in the cylindrical glass using the chemical etching solution.

Method of fabricating spacers and method of installing spacers in flat panel device

A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

Field emission device and its method of fabrication

In a method of manufacturing a field emitter, a patterned conductive layer is formed on a substrate, an upper surface of the conductive layer is coated with a mixture of a field emission material and metal powder, the mixture is thermally treated to improve adhesion of the mixture to the conductive layer, and a field emission material and a metal deposited on a portion of the substrate other than the conductive layer are removed. Accordingly, the lifespan and field emission characteristic of the field emitter are greatly improved, and a large area field emitter having excellent characteristics that cannot be realized in the conventional art is fabricated.

Method of manufacturing field emitter

A field emission device and a field emission display using the same. The field emission device includes a concave cathode electrode and an emitter formed at a center thereof. A gate electrode and a focusing gate electrode above the gate electrode serve to focus and refocus the electron beam emanating from the emitter to produce a better focused electron beam leading to improved color purity.

Field emission device and field emission display using the same having a concave-shaped cathode to enhance electron focusing

A method of forming emitters and a method of manufacturing a Field Emission Device (FED) using the method includes: forming a volume-changeable structure on an electrode, the volume-changeable structure composed of a polymer which reversibly swells and shrinks in response to an external stimulus; injecting an electron-emitting material into the volume-changeable structure; aligning the electron-emitting material; and removing the polymer to form the emitters.

Method of forming emitters and method of manufacturing field emission device (FED)

There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.

Method of manufacturing nano-wire

A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores.

Carbon nanotube structure and method of vertically aligning carbon nanotubes

A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

Method for manufacturing carbon nanotubes

An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Electron amplifier utilizing carbon nanotubes and method of manufacturing the same

A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

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Seoul, South Korea

Tae-Won Jeong