Samsung Electronics Co., Ltd.

Tae-Won Ha

Ju-Youn Kim

Jong-Mil Youn

Hyung-Soon Jang

Jae-Hoon Lee

Sung-soo Kim

Gi-Gwan Park

Koung-min Ryu

Sang-koo Kang

Jeong-Nam Han

Kwang-You Seo

Ji-hwan An

Suk-Hoon Kim

Kwang-Yul Lee

A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Semiconductor device including a first fin active region, a second fin active region and a field region

Semiconductor device including a first fin active region and a second fin active region

A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.

Semiconductor device and method for fabricating the same

Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern

A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are spaced from each other on a substrate, forming a first dielectric layer along the sides and bottom of the first trench, forming a second dielectric layer along the sides and bottom of the second trench, forming first and second lower conductive layers on the first and second dielectric layers, respectively, forming first and second capping layers on the first and second lower conductive layer, respectively, performing a heat treatment after the first and second capping layers have been formed, removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment, and forming first and second metal gate structures on the first and second dielectric layers, respectively.

Method for fabricating semiconductor device including replacement process of forming at least one metal gate structure

High-integration semiconductor device and method for fabricating the same

Semiconductor device having a substrate including a first active region and a second active region

A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Semiconductor device and fabricating method thereof

High integration semiconductor device and method for fabricating the same

Growing community of inventors

Seongnam-si, South Korea

Tae-Won Ha