Industry-university Cooperation Foundation Hanyang University

Korea Institute of Science and Technology

Intellectual Discovery Co., Ltd.

Lg Display Co., Ltd.

Top Engineering Company

Tae Whan Kim

Young Pyo Jeon

Dong Chul Choo

Jeong Heon Lee

Jun Gyu Lee

Dae Hun Kim

Eun Kyu Kim

Chaoxing Wu

Hyun Soo Jung

Hyo Jin Kim

Sung Ho Kim

Jae Hyeon Park

Young Ju Park

Jae Hun Jung

Yong Ju Park

Yong Hoon Choi

Ju Tae Ryu

Seung Oun Kang

Yu Ra Kim

Su Hyeong Park

Hwan Young Choi

Joo Hyung You

Jae Hwan Shim

Qifeng Han

Si Hyun Sung

Beom Hui Yoo

Hyun Sung Bang

Jeong Woon Lee

Dae Uk Lee

Na Hyun Park

Provided herein are a fabric-based substrate and an organic electronic device including the same. The fabric-based substrate includes a fabric layer having an upper surface and a lower surface. A plurality of electrodes are disposed on the upper surface of the fabric layer. An adhesive layer is provided on the upper surface and the lower surface of the fabric layer and filled at least some empty regions between the electrodes and the fabric layer, between the electrodes, and at least some pores in the fabric layer. A self-healing polymer layer is disposed on the adhesive layer located on the lower surface of the fabric layer.

Fabric-based substrate and organic electronic device including the same

A method of manufacturing a highly conductive polymer thin film is proposed. The method includes a step of coating a substrate with a first dopant solution including a polymer material and a first dopant to form a conductive polymer thin film subjected to first conductive treatment; and a step of performing second conductive treatment using a second dopant solution including pyronin B on the conductive polymer thin film to form a highly conductive polymer thin film.

Method of manufacturing highly conductive polymer thin film including plurality of conductive treatments

An electronic synaptic device includes: a lower electrode; an upper electrode; and an active layer provided between the lower electrode and the upper electrode and including a plurality of conductive nanoparticles, wherein the conductive nanoparticles are dispersed in a matrix forming a continuous phase, and the matrix is composed of a protein. The electronic synaptic device has a low switching operation voltage, is capable of implementing a transition phenomenon from a short term potentiation state to a long term potentiation state even with a relatively low voltage, and has high stability; and, therefore, can be preferably applied as a memristive device for implementing neuromorphic computing.

Electronic synaptic device and method for manufacturing same

The present disclosure relates to a neuron behavior-imitating electronic synapse device and a method of fabricating the same. According to one embodiment, the neuron behavior-imitating synapse device includes a first electrode having a lithium-doped surface, an active layer formed on the first electrode and including a polyelectrolyte and one or more metal nanoparticles, and a second electrode formed on the active layer.

Neuron behavior-imitating electronic synapse device and method of fabricating the same

Disclosed are a photodetector using a photoelectric conversion effect wherein current changes according to light; and a method of manufacturing the photodetector. More particularly, a photodetector manufactured using a transition metal dichalcogen compound having high sensitivity to wavelengths of light in the visible light region by forming a sensor layer utilizing a transition metal dichalcogen compound such that the thickness of the sensor layer can be adjusted is provided.

Photodetector based on transition metal dichalcogen compound and method of manufacturing the same

A non-volatile memory device is provided. The non-volatile memory device comprises a semiconductor channel layer, a tunneling layer, a charge trap layer, and a blocking insulating layer arranged in sequence. A plurality of control gate electrodes are disposed on the blocking insulating layer. An inter-cell insulating layer is disposed between the control gate electrodes. A spacer insulating film is disposed between the control gate electrode and the inter-cell insulating layer, and the spacer insulating film has a lower dielectric constant than the inter-cell insulating layer. The charge trap layer extends under the plurality of control gate electrodes and is disposed under the inter-cell insulating layer and the spacer insulating film.

Non-volatile memory device having low-k dielectric layer on sidewall of control gate electrode

A vertical memory device and a method of fabricating the same are proposed. The vertical memory device includes a gate stack structure in which gates and interlayer insulating layers for insulating the gates are alternately laminated on a substrate and multiple memory cell areas and inter-memory cell areas are divided in a first direction perpendicular to the substrate; a channel structure extending in the first direction from the substrate to penetrate the gate stack structure; and charge storage elements disposed between the gate stack structure and the channel structure and sequentially formed to be embedded in the gate stack structure.

Vertical memory device with tri-layer channel

Disclosed is a high-power sliding-mode triboelectric generator including a substrate; a positive electrode formed on the substrate; a positively charged body provided on the positive electrode and formed to be tilted at a predetermined angle from the substrate; a negatively charged body located to be opposite to the positively charged body and formed to be tilted at the same angle as in the positively charged body; a negative electrode provided on the negatively charged body and configured to support the negatively charged body; and at least one spacer formed between the positively charged body and the negatively charged body, is formed of an elastic body, and configured to maintain an interval between the positively charged body and the negatively charged body.

High-power sliding-mode triboelectric generator having tilted-face structure and method of manufacturing the same

A neural device to which a conditioned response function is imparted and a driving method thereof are disclosed. Quantum dots and a polymer insulating layer are formed between upper and lower electrodes. Conductive filaments are formed at interfaces between the quantum dots and the polymer insulating layer. When a positive pulse, which is an unconditioned stimulus signal, is applied, the conductive filaments are formed, and a low resistance state is implemented. As the number of applications of a negative pulse, which is a conditioned stimulus signal, increases, the neural device is switched from a high resistance state to the low resistance state. Through this, the neural device having learning ability for the conditioned stimulus signal may be implemented and driven.

Neural device of performing conditioned response and method of driving the same

A paper-based triboelectric nanogenerator and a method of manufacturing the same are disclosed. The paper-based triboelectric nanogenerator of the present disclosure includes a sandwich structure including a first paper, conductive papers formed on the first paper and each including an electrode composed of a mesh-type conductive nanomaterial, and a second paper formed on the conductive papers; and a polymer film formed in a selective area on the second paper, wherein the number of the conductive papers formed on the first paper is two; the two conductive papers are formed so as to be spaced apart from each other in the horizontal direction; and the polymer film formed in the selective area is formed only in the upper area of one of the two conductive papers.

Paper-based triboelectric nanogenerator and method of manufacturing the same

There are disclosed a temperature sensor and a method for manufacturing the same. The temperature sensor comprises; a sensor unit including an organic light emitting layer including a delayed fluorescent material; a temperature transfer unit located below the sensor unit to transfer an external temperature to the sensor unit; a first electrode located on the sensor unit; a second electrode located below the sensor unit to be spaced apart from the temperature transfer unit; and a light intensity measuring unit located below the second electrode and measuring the intensity of light emitted from the organic light emitting layer. The temperature sensor can measure a temperature by using a change in the intensity of light using delayed fluorescence, thereby providing improved sensitivity.

Temperature sensor, method for manufacturing temperature sensor, and display device to which temperature sensor is applied

The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nano-structures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles.

Solar cell having a double-sided structure, and method for manufacturing same

Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.

Organic light emitting device

Disclosed are a method for detecting a touch position of a touch screen and the touch screen using the same. A method for detecting a touch position on a touch screen includes the steps of: detecting a touched touch screen block among touch screen blocks by using signals generated from at least one touch sensor among touch sensors included in a plurality of touch screen blocks into which an area of the touch screen is divided; and detecting a touch position in the detected touch screen block on the basis of a signal of a touch sensor included in the detected touch screen block. Thus, compared to an existing method of processing a signal by reading measurement values of all measurement sensors, the invention enables fast signal processing, thereby reducing measurement signal processing time for measuring a touch position of a touch screen.

Method for detecting touch position of touch screen and touch screen using same

Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.

Growing community of inventors

Seoul, South Korea

Tae Whan Kim