Samsung Electronics Co., Ltd.

Tae-Sung Lee

Byung-Hoon Jeong

Jeong-Don Ihm

Sang-Lok Kim

Jae-Yong Jeong

Young-Don Choi

Min-Jae Lee

Dae-Hwan Kim

Byong-mo Moon

Dae-Woon Kang

Seon-Kyoo Lee

A semiconductor device includes a semiconductor die, a defect detection structure and an input-output circuit. The semiconductor die includes a central region and a peripheral region surrounding the central region. The peripheral region includes a left-bottom corner region, a left-upper corner region, a right-upper corner region and a right-bottom corner region. The defect detection structure is formed in the peripheral region. The defect detection structure includes a first conduction loop in the left-bottom corner region, a second conduction loop in the right-bottom corner region, a third conduction loop in the left-bottom corner region and the left-upper corner region and a fourth conduction loop in the right-bottom corner region and the right-upper corner region. The input-output circuit is electrically connected to end nodes of the first conduction loop, the second conduction loop, the third conduction loop and the fourth conduction loop.

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

A semiconductor chip, a test system, and a method of testing the semiconductor chip. The semiconductor chip includes a pulse generator configured to generate a test pulse in response to a test request; a logic chain comprising a plurality of logic devices serially connected to each other and transferring the test pulse sequentially; and a detector configured to detect a logic level of an output signal of each of the logic devices and output a detection result indicating a degree of an inter-symbol interference (ISI).

Semiconductor chip, test system, and method of testing the semiconductor chip

A circuit comprises a comparing means for comparing an internal voltage to a reference voltage for outputting a first driving signal, an internal voltage driving means for outputting the internal voltage in response to the first driving signal; an internal voltage detecting means for detecting the internal voltage and for generating a second driving signal in response to an active signal, and an overdriving control means for controlling the first driving signal in response to the second driving signal.

Internal voltage generating circuit

Growing community of inventors

Hwaseong-si, South Korea

Tae-Sung Lee