Samsung Electronics Co., Ltd.

Tae-sun Kim

Kwang-sub Yoon

Ki-Man Lee

Bum-Joon Youn

Jae-Kyung Seo

Yu-Ra Kim

Jin-Man Kim

Hyun-jeong Lee

Ji-Ho Kim

Tae-Hwan Oh

Sung-won Choi

Tae-Hwan Park

Young-sik Park

Min-keun Kwak

Tae-hwan Park

Yong-chul Kim

Byoung-hoon Kim

Yeo-Jin Lee

A semiconductor device includes a semiconductor substrate including an in-cell area and a scribe lane defining the in-cell area, a first overlay pattern on the semiconductor substrate, and a second overlay pattern adjacent to the first overlay pattern, wherein the first overlay pattern is a diffraction-based overlay (DBO) pattern and the second overlay pattern is a scanning electron microscope (SEM) overlay pattern.

Semiconductor device having overlay pattern

In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Methods of manufacturing a semiconductor device

In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Methods of manufacturing semiconductor devices and electronic devices

A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Methods of forming layer patterns of a semiconductor device

An apparatus and method for decoding a variable length code, wherein a user can set a variable length decoding table, are provided. The apparatus comprises a pre-decoding unit, a shifter, first through M-th look-up table address registers, selector, a memory controller, a memory, and a memory searcher. To decode a variable length coded data bitstream in units of 3 bits, a LOC information table can be prepared based on a variable length coding table. The LOC information table comprises LOC information bits and node types. LOC information bits for each node type are expressed using four formats A, B, C, and D to express the characteristic of a branch generated during 3-bit decoding, each of the formats A, B, C, and D having a digital value of 2 bits. The pre-decoding unit comprises a first pre-decoder and a second pre-decoder. One of the first pre-decoder and the second pre-decoder is selected according to the characteristic of a code of an input data bitstream.

Apparatus and method for decoding variable length code

A joint photographic expert group (JPEG) Huffman table decoder and a method thereof based on a binary search technique. The JPEG Huffman table decoder performs symbol matching based on the binary search and calculates an address of the matched symbol in code book data. Comparison time and an amount of memory required for searching the symbols are reduced.

JPEG Huffman table decoder and method thereof based on binary search technique

Growing community of inventors

Hwaseong-si, South Korea

Tae-sun Kim