Samsung Electronics Co., Ltd.

Tae Sub Jung

Bum Suk Kim

Jung Chak Ahn

Young Chan Kim

Jong Hoon Park

Young Gu Jin

Moo Sup Lim

Yong Hun Kwon

Dong Min Keum

Jung Saeng Kim

Kyung Ho Lee

Sung Ho Choi

Min Jun Jang

Sung Young Seo

Doo Sik Seol

Sang K Hwang

Min Hee Jang

Tae Chan Kim

Yun Tae Lee

Masato Fujita

Jin Hak Kim

Kyu Hyun Choi

Chang Keun Lee

Sae Young Kim

Jung Hoon Jung

Byung Yong Kim

Eung Kyu Lee

Seung Ki Jung

Kyung Duck Lee

Seung Ki Baek

An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

Image sensor

An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

Image sensor having different concentration of impurities in the channel regions and isolation elements

An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Image sensor for compensating for signal difference between pixels

An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

Image sensors and distance measuring devices using the same

An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

Image sensor and imaging device

An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal, and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.

Image sensor for outputting RGB bayer signal through internal conversion and image processing apparatus including the same

An image sensor, an image processing apparatus including the same and an interpolation method of the image processing apparatus are provided. The image sensor includes a plurality of pixels that include a low-luminance pixel including a first photoelectric conversion device that accumulates a charge less than a predetermined reference value and a high-luminance pixel including a second photoelectric conversion device that accumulates a charge more than the predetermined reference value. Interpolation is carried out giving more weight to the low-luminance pixel at low luminance and giving more weight to the high-luminance pixel at high luminance, so that a higher SNR is obtained.

Image processing apparatus and interpolation method operable to calculate a luminance and interpolate color by adjusting a signal output from at least one low-luminance pixel and at least one high-luminance pixel

Image sensor for outputting RGB Bayer signal through internal conversion and image processing apparatus including the same

A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light.

Color filter array having plural filter layers, image sensor including the same, and electronic device including the color filter array

A memory cell device having circuitry located between memory cell arrays comprises power and ground lines to the circuitry formed directly above the memory cell arrays. The power and ground lines are parallel and positioned in an adjacent alternating pattern such that a power line is positioned adjacent a ground line, which is positioned adjacent another power line and so on. Signal lines carrying signals to and from the circuitry are also formed directly above memory cell arrays.

Power and signal line bussing method for memory devices

A precharge circuit for use in a static random access memory is disclosed two step bit line pair precharging scheme in a precharge cycle performed prior to a read operation. The first precharging step is performed via each drain-source path of N-channel MOS transistor pair to the corresponding bit lines in response to a first pulse generated by the write enable signal and the following second precharging step is performed via means for precharging more dominantly than the transistor pair in response to a second pulse generated by the address transition detection circuit. Owing to the off-state of the N-channel MOS transistor pair in a read operation after a write operation, high speed read operation is obtained.

Growing community of inventors

Hwaseong-si, South Korea

Tae Sub Jung