Samsung Electronics Co., Ltd.

Tae-Sub Im

Seung-Ki Chae

Il-Kyoung Kim

Hyung-Sik Hong

Sung-wook Park

Ki-Young Yun

Gyeong-Su Keum

No-Hyun Huh

Tae-Won Lee

Young-Ha Yoon

Jae-Hyun Han

Hyun-Kyu Kang

Doo-Guen Song

Sang-Yeob Cha

Gil-Jung Yun

Won-Soon Lee

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Ion implanter with etch prevention member(s)

In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Ion implanting apparatus and ion implanting method using the same

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Gyeonggi-do, South Korea

Tae-Sub Im