Samsung Electronics Co., Ltd.

Tae-Seong Park

Dong-Seok Suh

Bo-Seong Kim

Sang-Ho Ahn

Seung-Woo Kim

Hee-Guk Choi

Pyeong-Wan Kim

Ho-Jeong Mun

A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.

Storage node, phase change memory device and methods of operating and fabricating the same

In the method, a conductive pad of the board is etched to a depth that is greater than 50% and less than 100% of a thickness of the conductive pad. Subsequently, a solder ball may be formed on the etched conductive pad. For example, the conductive pad may be copper.

Method of forming a solder ball on a board and the board

Growing community of inventors

Hwasung, South Korea

Tae-Seong Park