Samsung Electronics Co., Ltd.

International Business Machines Corporation

Mirae Corporation

Korea Institute of Science and Technology

Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Tae Seok Oh

Sampath Purushothaman

Jane M Shaw

George Frederick Walker

Alfred Viehbeck

Terrence Robert O'Toole

Kang-Wook Lee

Min Ho Kim

Young Gu Jin

Tae Chan Kim

Kwang Hyun Lee

John J Ritsko

Dong Ki Min

Tae Yon Lee

Jungihl Kim

Sang Chul Sul

Eleftherios Adamopoulos

Byeong Cheon Lee

Yoon H Kim

Jung Hoon Jung

Chanhong Kim

Inkyu Lee

Hoon Shung Lee

Ju Hwan Jung

Seung Ki Kim

Nam Kyu Kim

Ji Hwan Moon

Jong Hong Kim

Seok Ju Jang

The present disclosure relates to a pre-5-generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4-generation (4G) communication system such as long term evolution (LTE). Disclosed are an apparatus and a method for a permutation of a block code in a wireless communication system. A method of operating a transmitting node in a wireless communication system includes: determining a permutation matrix according to a block code scheme; generating symbols corresponding to a plurality of antennas based on the block code scheme and the permutation matrix; and transmitting the symbols to a receiving node through the plurality of antennas. The permutation matrix is determined based on a number of blocks and an arrangement structure of the plurality of antennas, and the number of blocks comprises a number of sub-blocks within a code block corresponding to the permutation matrix.

Apparatus and method for permutation of block code in wireless communication system

ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same

An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

Image sensor chips

An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point.

Image sensor and image processing system including subpixels having a transfer circuit, comparator and counter for outputting the count value as the subpixel signal

A surface mounting device having a coplanarity inspection system is disclosed. The surface mounting device includes: a vision apparatus including a camera for picking an electronic component from a head and inspecting a position and an alignment state of the electronic components; a laser sensor including a light receiving part and a light emitting part for inspecting the coplanarity of the electronic components; a controller for controlling data obtained by the laser sensor; and a computer for computing the coplanarity by receiving the data outputted from the controller.

Coplanarity inspection system of package and method thereof

A nozzle exchanging or mounting apparatus is provided for use in exchanging nozzles utilized for vacuum sucking a semiconductor device and various electric components in a surface mounting apparatus. The nozzle exchanging or mounting apparatus includes a nozzle installation body having a nozzle installation portion in which a plurality of nozzles can be disposed at a predetermined interval therebetween, a locking unit, the locking unit being longitudinally inserted into and installed at one side of the nozzle installation body, a bracket for inserting one side of the locking unit thereinto to fix the locking unit in place, and a driving unit for selectively moving the locking unit backward and forward. The apparatus provides the advantage that the time taken to exchange nozzle(s) can be reduced due to the stable and prompt exchange of the nozzle(s).

Locking apparatus for a nozzle exchange apparatus

A gripper for a surface mounting apparatus is provided. The gripper includes a gripper holder having an air through hole formed in a central portion of the gripper holder, a gripper adapter positioned below the gripper holder to which one end of a tension spring is fixed, a gripper piston rod provided inside the gripper holder and configured to be upwardly and downwardly moved by air supplied through the air through hole, a pair of jaws provided inside the gripper adapter, the jaws being movably disposed with respect to each other, the other end of the tension spring being fixed to the pair of jaws, a gripper tooth adapter fixed at an upper portion of the jaws by way of a fixing device, a gripper tooth assembly attached to an upper portion of the gripper tooth adapter, the gripper tooth assembly being configured to hold an electronic component, a shaft provided between the pair of jaws and fixed to the gripper piston rod, and a roller coupled to the shaft. The gripper may further include a cam coupled to the shaft.

Gripper for a surface mounting apparatus

The disclosure describes a multilayer article of manufacture comprising a substrate having adhered to it a terminally unsaturated adhesive polyimide, where the surface of the adhesive opposite the substrate is adhered to a polyimide, the article further characterized in having one set or a plurality of alternating layers of the terminally unsaturated adhesive polyimide and the polyimide. In another embodiment, the article has at least one adhesive polyimide layer adhered to a metal substrate or an electrical circuit component such as an integrated circuit, or means for forming electrical connections in an electrical circuit such as metal conduits on the circuit or a wiring network embedded within a ceramic and/or polymer substrate. A novel adhesive polyimide is also described which is an adhesive polyimide such as ODPA-APB terminated with unsaturated heterocyclic monoamines such as azaadenines, aminobenzotriazoles, aminopurines or aminopyrazolopyrimidines and optionally anhydrides, aminoacetylenes, vinylamines or amino phosphines. The novel polyimide may also contain unsaturated heterocyclic groups in the polymer backbone or chain, either as a partial or complete replacement for the aromatic diamines used in synthesizing the polyimide. This novel adhesive polyimide in this invention acts as an adhesive layer for the polymer-substrate (copper, polymer, glass ceramic) interface as well as a copper diffusion barrier layer for the polymer-copper interface.

Adhesive layer in multi-level packaging and organic material as a metal

The disclosure describes a multilayer article of manufacture comprising a substrate having adhered to it a terminally unsaturated adhesive polyimide, where the surface of the adhesive opposite the substrate is adhered to a polyimide, the article further characterized in having one set or a plurality of alternating layers of the terminally unsaturated adhesive polyimide and the polyimide. In another embodiment, the article has at least one adhesive polyimide layer adhered to a metal substrate or an electrical circuit component such as an integrated circuit, or means for forming electrical connections in an electrical circuit such as metal conduits on the circuit or a wiring network embedded within a ceramic and/or polymer substrate. In manufacturing the article of manufacture, a surface treatment technique such as wet process or a plasma/optional silane coupling agent may be applied to either the substrate, adhesive polyimide film or polyimide film prior to the bonding operation. A novel adhesive polyimide is also described which is an adhesive polyimide such as ODPA-APB terminated with unsaturated heterocyclic monoamines such as azaadenines, aminobenzotriazoles, aminopurines or aminopyrazolopyrimidines and optionally anhydrides, aminoacetylenes, vinylamines or amino phosphines. The novel polyimide may also contain unsaturated heterocyclic groups in the polymer backbone or chain, either as a partial or complete replacement for the aromatic diamines used in synthesizing the polyimide. This novel adhesive polyimide in this invention acts as an adhesive layer for the polymer-substrate (copper, polymer, glass ceramic) interface as well as a copper diffusion barrier layer for the polymer-copper interface.

A composition for an intergranular insulation type semiconductive ceramic capacitor essentially consisting of 1 mole of SrTiO.sub.3, 0.005 mole to 0.012 mole of TiO.sub.2, and 0.003 mole to 0.006 mole of a quinquevalent ion oxide selected from a group consisting of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Sb.sub.2 O.sub.5 and the mixture thereof. An intergranular insulation type semiconductive ceramic capacitor is made by sintering a ceramic body made of the composition at a temperature of not less than 1,500.degree. C. in the atmosphere, to form a sintered body having a liquid phase at its grain boundaries, and cooling the sintered body so that the liquid phase forms an intergranular insulating layer. The intergranular insulation type semiconductive ceramic capacitor exhibits a dielectric constant of not less than 40,000 and an insulation resistance of not less than 10.sup.9 .OMEGA..

Composition and method for making an intergranular insulation type

An intercrystalline semiconductive ceramic capacitor having a dielectric ceramic body formed by sintering a dielectric ceramic having a composition essentially consisting of a major component comprised of 1 mole SrTiO.sub.3 and a minor component comprised of 0.01 to 0.04 mole TiO.sub.2, 0.001 to 0.010 mole Dy.sub.2 O.sub.3, 0.001 to 0.007 mole ZnO, 0.002 to 0.012 mole MnO.sub.2 and 0.01 to 0.07 mole Al.sub.2 O.sub.3 at a temperature of 1,400.degree. to 1,470.degree. C. in a reducing atmosphere, an intercrystalline insulation layer formed by coating an insulation paste over both surfaces of the dielectric ceramic body and heat treating the resultant body, and external electrodes formed on the both surface of the dielectric ceramic body, respectively.

Intercrystalline semiconductive ceramic capacitor

A heater with a humidifier wherein the humidifier comprises a plurality of double pipes in the uppermost line of the heat exchanging pipes of the heater. The double pipe includes an inner pipe for burned gas flow and an outer pipe for containing humidifying water, both of which are arranged concentrically. A plurality of orifices are formed at the top portion of the outer pipe so that the steam generated from the humidifying water by heat of the burned gas in the inner pipe may be spurted from the orifices to humidify the air stream blown by a blower. The outer pipes are connected to a common feed-water pipe in which a flow control valve may be provided. The control valve is also electrically connected to a feed-water level sensor in the outer pipe so that the level of the water in the outer pipe may be detected and controlled.

Growing community of inventors

Seoul, South Korea

Tae Seok Oh