Lg Electronics Inc.

Korea Advanced Institute of Science and Technology

Goldstar, Co., Ltd.

Tae Kyung Yoo

Wook Hwan Kim

Chin Kyo Kim

Jun Ho Jang

Young Se Kwon

Min Soo Noh

Jong S Kim

Shi Jong Leem

Ju Ok Seo

Meoung Whan Cho

Jae Eung Oh

A nitride semiconductor light-emitting element is disclosed. An n type AlGaN cladding layer is grown on a GaN substrate, and an InGaN active layer of a quantum well structure is grown on the n type AlGaN cladding layer at a temperature of about 800&deg; C. or less. Subsequently, a buffer layer of any one of GaN, AlGaN, and InGaN is grown on the InGaN active layer at a temperature of about 900&deg; C. or less. A p type AlGaN cladding layer and a p type GaN electrode layer are sequentially grown on the buffer layer. A p type electrode is formed over the p type GaN electrode layer while an n type electrode is formed below the substrate or over the n type cladding layer. Thus, the nitride semiconductor light-emitting element having high efficiency optical characteristic and thermal characteristic can be obtained.

Nitride semiconductor light-emitting element and method for fabricating the same

GaN system compound semiconductor and method for growing a crystal thereof, which can significantly reduce a concentration of crystalline defects caused by lattice mismatch by growing a GaN system compound semiconductor of GaN or In Ga N by using In Al N crystal on a substrate as an intermediate buffer layer, the method including the steps of (1) providing a sapphire substrate, (2) growing an intermediate buffer layer of In Al N on the sapphire substrate, and (3) growing GaN or In Ga N system compound semiconductor on the intermediate buffer layer.

GaN system compound semiconductor and method for growing crystal thereof

A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second condcutive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

Semiconductor optical device and method for fabricating the same

Quantum dot infrared detection device and method for fabricating the same, which is a new concept of detection device in which quantum dots in the quantum dot part having a stack of alternative quantum dots and separating layers are doped with impurities, so that the quantum dot part itself absorbs infrared ray and serves as a channel for transferring electrons generated by the infrared ray absorption, for enhancing device performance and a device uniformity, and simplifying a device structure and a device fabrication process.

Quantum dot infrared detection device and method for fabricating the same

A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

Transparent media having high hardness and poor light absorption is cut or scribed with characters or figures by a laser beam. The method includes forming a support of a medium which is a good absorber of a laser beam, and placing the transparent medium on the support, and focusing the laser beam onto the support through the transparent medium while the transparent medium and the laser beam are moved relative to each other. A flame is generated between the support and the transparent medium to machine the transport medium, allowing it to be cut or scribed with characters or figures.

Device and method for machining transparent medium by laser

A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.

Method for fabricating a semiconductor laser diode

A semiconductor laser capable of minimizing generation of defects at the interface between grown layers, and a method for fabricating the same. The semiconductor laser is fabricated by forming an n type buffer layer over an n typesemiconductor substrate, forming a first n type clad layer over the buffer layer, forming an active layer over the first clad layer, sequentially growing a first p type clad layer, an etch stop layer, a second p type clad layer, a p type current injection layer, a first p type evaporation-preventing layer and a second p type evaporation-preventing layer, thereby forming a second clad layer, etching the second clad layer, thereby forming a mesa-shaped ridge portion, forming a current shield layer over a portion of the second clad layer exposed upon the etching, etching a portion of the current shield layer disposed over the mesa-shaped ridge portion, thereby forming a current injection region, and exposing a portion of the second evaporation-preventing layer disposed in the current injection region, etching the exposed portion of the second evaporation-preventing layer, thereby exposing a portion of the first evaporation-preventing layer disposed beneath the exposed portion of the second evaporation-preventing layer, and forming a p type cap layer over the entire exposed surface of the resulting structure.

Method for fabricating a semiconductor laser

A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45.degree. mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45.degree. mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment.

Growing community of inventors

Kyonggi-do, South Korea

Tae Kyung Yoo