Samsung Electro-mechanics Co., Ltd.

Tae Kyung Lee

Hwa Sun Lee

Ran Hee Shin

Moon Chul Lee

Jin Suk Son

Sung Sun Kim

Tae Yoon Kim

Chang Hyun Lim

Je Hong Kyoung

Sang Kee Yoon

Sung Woo Han

Jong Woon Kim

Won Jae Han

Tae Hun Lee

Jae Chang Lee

In Young Kang

Dae Ho Kim

Sung Min Cho

Seung Joo Shin

Jong Beom Kim

Seung Wook Park

Sang Jin Kim

Seung Mo Lim

Sang Uk Son

Sung Jun Lee

Yun Sung Kang

Jeong Suong Yang

Dae Hun Jeong

Kyo Yeol Lee

Yoon Sok Park

Eun Tae Park

Kwang Su Kim

Nam Jung Lee

Jae Sang Lee

Yong Jin Kang

Hyun Min Hwang

Han Bit Kim

Tah Joon Park

Yeong Gyu Lee

Sang Heon Han

Byung Hun Kim

Jae Hyun Jung

Jae Hyoung Gil

Nam Soo Park

Seong Hun Na

Jun Boum Lim

Chan Hee Park

Pil Joong Kang

Jae Goon Aum

Moon Chui Lee

Hyung Jae Park

Min Jae Ahn

A bulk acoustic resonator filter includes: a series bulk acoustic resonator electrically connected, in series, between first and second ports through which a radio frequency (RF) signal passes; a second shunt bulk acoustic resonator, electrically shunt connected between the series bulk acoustic resonator and a ground and having a resonance frequency lower than that of the series bulk acoustic resonator; and a first shunt bulk acoustic resonator electrically connected to the second shunt bulk acoustic resonator in series and having a resonance frequency higher than that of the second shunt bulk acoustic resonator. One or both of the series bulk acoustic resonator and the first shunt bulk acoustic resonator includes a first electrode disposed above a substrate; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; and a trench formed in an upper surface or above the second electrode and recessed downwardly.

Bulk acoustic resonator filter

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Acoustic resonator and method of manufacturing the same

A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.

Bulk-acoustic wave resonator

A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant 'c' to an in-plane lattice constant 'a' (c/a) of less than 1.58.

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 &#x212b;&#x2264;&#x394;Mg&#x2264;170 &#x212b; may be satisfied, &#x394;Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Acoustic wave resonator

A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.

An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

Acoustic resonator filter

A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 &#x212b; and less than or equal to 1000 &#x212b;, or may be thinner than the first electrode.

A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

Film bulk acoustic resonator and method of manufacturing the same

A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer&#xd7;a concentration (at %) of the dopant]/100 is less than or equal to 80.

Bulk acoustic wave resonator

An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

Acoustic resonator

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

Bulk-acoustic resonator module

An acoustic resonator comprises a substrate, a resonant portion disposed on the substrate and in which a first electrode, a piezoelectric layer, and a second electrode are stacked, a protective layer disposed on an upper portion of the resonant portion, and a hydrophobic layer formed on the protective layer, and the protective layer comprises a first protective layer stacked on the second electrode and a second protective layer stacked on the first protective layer, wherein a density of the second protective layer is higher than a density of the first protective layer.

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Suwon-si, South Korea

Tae Kyung Lee