Hynix Semiconductor Inc.

Skhynix Inc.

Tae-Kyung Kim

Heung-Jae Cho

Kwan-Yong Lim

Min-Gyu Sung

Yong-Soo Kim

Hong-Seon Yang

A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.

Semiconductor device with gate stack structure

A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.

Method for fabricating semiconductor device with an intermediate stack structure

Growing community of inventors

Ichon-shi, South Korea

Tae-Kyung Kim