Amkor Technology, Inc.

Amkor Technology Singapore Holding Pte. Ltd.

Tae Kyung Hwang

Eun Sook Sohn

Jong Sik Paek

Gi Jeong Kim

Won Joon Kang

Se Woong Cha

Sung Su Park

Jung Gi Jin

Seok Bong Kim

Jin Young Kim

Soo Hyun Kim

Byong Jin Kim

Jin Han Kim

Jung Park

Jae Yun Kim

Dae Gon Kim

Jae Beum Shim

Joon Su Kim

SungSun Park

Jae Min Na

Kyoung Rock Kim

Kwang Mo Chris Lim

KyeRyung Kim

A method for providing an electronic package structure includes providing a substrate having a die pad having a die pad top surface and an opposing die pad bottom surface, leads laterally spaced apart from the die pad, and a substrate encapsulant interposed between the die pad and the leads and includes a substrate top surface and an opposing substrate bottom surface. The substrate encapsulant is provided such that the die pad and the leads protrude outward from the substrate bottom surface. The method includes providing an electronic device having opposing major surfaces and a pair of opposing outer edges. The method includes connecting the electronic device to the substrate such that one major surface of the electronic device is spaced apart from the die pad top surface and upper surfaces of the leads, and the outer edges overlap an opposing pair of the leads.

Electronic package structure with reduced vertical stress regions

Electronic package structure with improved board level reliability

A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.

Semiconductor device and manufacturing method thereof

An electronic package includes a lead frame structure having one or more structural features configured to improve board level reliability. In one embodiment, the structural feature comprises lead frame protrusions extending outward from the electronic package, which are configured to laterally engage solder structures used to attach the electronic package to a next level of assembly. In another embodiment, conductive bumps are attached to exposed portions of the lead frame in advance of next level assembly processes. In a further embodiment, the lead frame comprises laterally separated contact points for attaching an electron die and for attaching the electronic package to a next level of assembly.

Chip-scale electronic package structure with conductive connective element having increased surface area and laterally spaced connection points for improved connectivity

A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

Semiconductor package using a contact in a pleated sidewall encapsulant opening

A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.

A semiconductor device is disclosed. A conductive pillar for electrically connecting a semiconductor die to a circuit board may be gradually slimmed from the semiconductor die to the circuit board. A dummy conductive layer may be disposed between the semiconductor die and the conductive pillar. A width of an opening for opening a pattern of the circuit board may range from about 50% to 90% of the width of the lower end of the conductive pillar. Accordingly, a mechanical stress is prevented from being transmitted from the conductive pillar to the semiconductor die, or is absorbed by the dummy conductive layer, and thus, preventing cracks of the semiconductor die and a dielectric layer having a low dielectric constant.

Semiconductor device capable of preventing dielectric layer from cracking

A semiconductor device is provided. The semiconductor device comprises a semiconductor die having bond pads, each of which consists of a first bond pad made of a material whose ionization tendency is relatively low and a second bond pad made of a material whose ionization tendency is relatively high. The second bond pads function as sacrificial anodes to prevent the occurrence of galvanic corrosion at the interfaces between the first bond pads and conductive wires. In an embodiment, the upper surfaces of the second bond pads are marked instead of those of the first bond pads, which reduces the number of defects in the first bond pads. A method for fabricating the semiconductor device is also provided.

Semiconductor device and fabricating method thereof

Semiconductor device having redistribution layer

Growing community of inventors

Seoul, South Korea

Tae Kyung Hwang