Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Tae-Kyung Ahn

Min-Kyu Kim

Jae-Kyeong Jeong

Jin-Seong Park

Jong-Han Jeong

Hui-Won Yang

Hyun-Joong Chung

Yeon-Gon Mo

Kwang-Suk Kim

Chaun-Gi Choi

Yeon-gon Mo

Jae-Wook Kang

Eun-Hyun Kim

Sang-Il Park

Hyun-Soo Shin

Yeong-Gon Mo

Jin-Ho Kwack

Hun Joo Lee

Jang-Soon Im

Jae-Soon Im

Seung-Ho Jung

Hun-Jung Lee

Ji-Hun Ryu

Jae-Seob Lee

Jin-Sung Park

Joo-Hee Jeon

Se-Yeoul Kwon

Yo-Seoph Ko

Sang-Ii Park

Hul-Won Yang

A display panel includes a flexible electrochromic substrate comprising a first flexible substrate layer, a second flexible substrate layer opposing to the first flexible substrate layer and an electrochromic part disposed between the first and second flexible substrate layers and configured to discolor in response to a driving signal, a transistor layer disposed on the flexible electrochromic substrate, the transistor layer comprising a plurality of transistors and an organic light emitting diode layer disposed on the flexible electrochromic substrate on which the transistor layer is disposed, the organic light emitting diode layer comprising a plurality of organic light emitting diodes connected to the plurality of transistors.

Flexible display panel and display apparatus including electrochromic part

An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Organic light-emitting display device and method of manufacturing the same

An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Organic light-emitting display device

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Thin film transistor, method of manufacturing the same and flat panel display device having the same

An organic light-emitting display device includes an organic light-emitting device, a thin film transistor (TFT) electrically connected to the organic light-emitting device, and a capacitor electrically connected to the organic light-emitting device, the capacitor including a first electrode layer and a second electrode layer opposite to each other, and a first insulating layer interposed as a single layer between the first electrode layer and the second electrode layer.

A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Thin film transistor having semiconductor active layer

A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.

Back panel for flat panel display apparatus, flat panel display apparatus comprising the same, and method of manufacturing the back panel

An organic light emitting display (OLED) device is disclosed. The OLED device includes a thin-film transistor (TFT), which includes a gate electrode; an active layer insulated from the gate electrode; source and drain electrodes insulated from the gate electrode and contacting the active layer; and an insulation layer interposed between the source and drain electrodes and the active layer; and an organic light-emitting element electrically connected to the TFT, wherein the insulation layer includes a first insulation sub-layer contacting the active layer; and a second insulation sub-layer formed on the first insulation sub-layer.

Organic light-emitting display and method of manufacturing the same

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

An organic electroluminescence display including: a gate line disposed on a substrate; a data line crossing the gate line; a TFT connected to the gate and data lines; a capacitor connected to the TFT; and an OLED connected to the TFT. A gate electrode of the TFT and a lower electrode of the capacitor are patterned from a first layer. A gate insulating layer disposed on the gate electrode and an insulating island disposed on the gate line are patterned from a second layer. A semiconductor island disposed on the insulating island and an active layer disposed on the gate insulating layer are patterned from a third layer. An insulating layer is disposed on the TFTs, the capacitor, and between the semiconductor island and the data line. An upper electrode of the capacitor, source/drain electrodes of the TFT, and the data line are patterned from a fourth layer.

Organic electroluminescence display and manufacturing method thereof

Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

Thin film transistor having an oxide semiconductor bilayer, method of manufacturing the same and flat panel display device having the same

Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Growing community of inventors

Yongin, South Korea

Tae-Kyung Ahn