Skhynix Inc.

Samsung Electronics Co., Ltd.

Other

Jds Uniphase Corporation

Imperial Innovations Limited

Hyundai Motor Company

Seoul National University

Micro Friend Co., Ltd

Tdm., Co. Ltd.

Protec Mems Technology Inc

Imperial College London

Tae Kyun Kim

Jung Park

Yong Seok Eun

Jae Won Ha

Seung Nyun Kim

Kyong Bong Rouh

Chang Kyu Choi

Byung In Yoo

Seung Ju Han

Jae Joon Han

Jung Jae Lee

Jin-Su Lee

Edmund L Wolak

Dong Soo Kim

So Young Lee

Dae Won Kim

Robert J Lang

Jun Young Lee

Jin-Ho Choi

Hyun Soo Kim

Jun Ki Kim

Kwan Hee Lee

Jin Wook Lee

Dae Kyung Ahn

Hoiju Chung

Yong Sang Yun

Jin Hee Cho

Lei Xu

Chang Ryong Heo

Jae Man Yoon

Wu Seong Lee

Jae Hun Choi

Eun Shil Park

Dong Hyung Kim

Youn Joung Cho

Youn Soo Kim

Hong Sik Chae

Su Ock Chung

Danhang Tang

Alykhan Tejani

Hyung Jin Chang

Jin Hwan Jeon

Seung Ho Jang

Mun Seon Jang

Byoung Uk Yoon

Sung Joon Park

Hyung Sok Yeo

Hyung-Won Yoon

Harrison Ransom

Young Bae Lee

Yong Ho Cho

Chang Shin Park

Su Young Ko

Nam Ho Kim

Jong Myeon Lee

Youn Hyung Choi

Bae Seok Lim

Sang-Soo Park

Sang In Baek

Min Young Kim

Neung Eun Kang

Dong Goo Choi

A method of manufacturing a semiconductor device includes: forming a trench in an insulating interlayer by etching the insulating interlayer; forming a conductive layer on bottom, side, and upper surfaces of the insulating interlayer where the trench is formed, using a first deposition process, the conductive layer on the bottom surface of the trench being thicker than the conductive layer on the side surface of the trench; forming a sacrificial layer in the trench covering the conductive layer formed on the bottom surface of the trench using a second deposition process different from the first deposition process; selectively removing the conductive layer formed on the upper surface of the insulating interlayer and formed on the side surface of the trench left exposed through the sacrificial layer; and selectively removing the sacrificial layer, to form a conductive line using the conductive layer remaining on the bottom surface of the trench.

Method of manufacturing a semiconductor device including a conductive line

A metal detecting system using search-coil type sensor includes sensor modules that detect respective objects which move around the corresponding sensor modules, each sensor module having one or more sensors that include respective housings having respective inner spaces, respective cores formed to be inserted into the inner spaces of the housings, and respective coils which are each wound around a portion of an outer circumferential surface of each of the housings, the portion corresponding to a position of each of the cores; imaging units that image the respective objects that move around the corresponding sensor modules and image respective persons possessing the respective objects; impedance matching units that are connected to a plurality of the sensor modules, respectively, and perform impedance matching; and amplifiers that are connected to the impedance matching units, respectively, and amplify a fine current and voltage generated during approach of the objects to the sensor modules.

Metal detection system using search coil-type sensor

Present invention relates to a semiconductor device including a buried gate structure. A semiconductor device comprises a substrate; a first fluorine-containing layer over the substrate; a trench formed in the first fluorine-containing layer and extended into the substrate; a gate dielectric layer formed over the trench; a gate electrode formed over the gate dielectric layer and filling a portion of the trench; a second fluorine-containing layer formed over the gate electrode; and a fluorine-containing passivation layer between the gate dielectric layer and the gate electrode.

Semiconductor device with buried gate structure

Disclosed are a probe sheet with a multi-layer contact tip and a method of manufacturing the same capable of improving the design freedom of a contact tip formed on a probe sheet of a probe card for testing a semiconductor device to come in contact with a pad of the semiconductor device. According to the present invention, the design freedom of a contact tip formed on a probe sheet of a probe card for testing a semiconductor device to come in contact with a pad of the semiconductor device can be improved, and since the shape of a contact surface of a contact tip is maintained the same and contact resistance is maintained in an allowable range even when a protective layer coated on the contact tip to increase durability of the contact tip is worn, test reliability of the probe card can be improved.

Probe sheet with contact tip on stacked multi-layer and method of manufacturing the same

A multi-measurement apparatus using a search-coil type sensor includes: sensor modules, each of which has one or more sensors including respective housings having respective inner spaces, respective cores formed to be inserted into the inner spaces of the housings, and respective coils which are each wound around a portion of an outer circumferential surface of each of the housings, the portion corresponding to a position of each of the cores; impedance matching units that are connected to a plurality of the sensors, respectively, and perform impedance matching; and amplifiers that are connected to the impedance matching units, respectively, and amplify a fine current and voltage generated during approach of objects to the sensors.

Multi-measurement device using search coil type sensor

A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.

Method for fabricating a semiconductor device

A method for fabricating a semiconductor device includes: forming an insulating layer over a substrate including a cell region and a peripheral region; forming an opening in the insulating layer by selectively etching the insulating layer in the cell region; forming a plug conductive layer to fill the opening and cover the insulating film; etching the plug conductive layer and the insulating layer in the peripheral region by using a peri-open mask covering the cell region; trimming the peri-open mask to expose the plug conductive layer in a boundary region where the cell region and the peripheral region contact each other; etching the plug conductive layer in the boundary region by using the trimmed peri-open mask; forming a peri-gate conductive layer over the entire surface of the substrate; and etching the peri-gate conductive layer by using a cell open mask.

Method for fabricating semiconductor device

Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Semiconductor device and method for fabricating thereof

An apparatus for correcting non-polarity and measuring displacement of an object using a search-coil type sensor includes a plurality of sensors that include respective housings having respective inner spaces, respective cores formed to be inserted into the inner spaces of the housings, and respective coils which are each wound around a portion of an outer circumferential surface of each of the housings, the portion corresponding to a position of each of the cores. The plurality of sensors are arranged in parallel with each other. A position of a core and a coil with respect to one housing differs from a position of a core and a coil with respect to another housing. An induced magnetic field is formed due to a distance change with respect to the object containing iron (Fe).

Apparatus for non-polarity correction and displacement measurement of object using search coil type sensor

Semiconductor memory device

A memory system includes a memory controller including: a memory core configured to store data and an error correction code corresponding to the data; a syndrome generator configured to generate a first syndrome by substituting the data and the error correction code, read from the memory core, into a first check matrix, and generate a second syndrome by substituting the data and the error correction code, read from the memory core, into a second check matrix; and an error correction unit configured to correct an error of the read data and error correction code by using the first syndrome and the second syndrome, wherein constituents having values of '1' in the first check matrix have values of '1' also in the second check matrix.

Memory system and operating method thereof

An unmanned aerial vehicle has a main body, a plurality of propeller connection parts extending from at least one side surface of the main body by a specific length, a plurality of propellers respectively connected to ends of the plurality of propeller connection parts, and a plurality of cameras mounted on at least one surface of the main body. A first camera interposed between the plurality of propeller connection parts among the plurality of cameras is disposed spaced from a center point of the main body by a distance of a first size. A first virtual straight line connecting a center point of a first propeller disposed adjacent to the first camera among the plurality of propellers to a center point of the main body has a length of a second size.

Unmanned aerial vehicle having camera, and method for unmanned aerial vehicle to process image

A semiconductor device test socket has a shielding structure formed around each contactor so as to prevent signal delay or distortion during a test process and thereby enhance the test reliability. The socket includes a vertical probe comprising a contactor which has a contact terminal to be electrically connected to an external connection terminal of a semiconductor device. The shielding structure which is formed by laminating a conductive material on the outer edge of the contactor and is electrically connected to a ground. The socket further includes an elastic layer which is filled in the space between the contactor and the shielding structure, and surrounds the contactor such that the contact terminal of the contactor is exposed; and a connection film which is formed by laminating a conductive material so as to electrically connect shielding structures of multiple vertical probes.

Semiconductor device test socket

Disclosed are a body of an unmanned aerial vehicle and an unmanned aerial vehicle including the same. The body includes a housing arranged in a first direction and including at least four housing sidewalls and an opening defined by the housing sidewalls and configured to receive a battery pack, a propeller support extending a specific distance from each housing sidewall in a second direction away from the center of the housing and perpendicular to the first direction and having, on a distal end, a motor and a propeller connected to the motor, and a PCB disposed on at least one of the housing sidewalls and associated with operating the motor and the propeller.

Unmanned aerial vehicle

Growing community of inventors

Seongnam-si, South Korea

Tae Kyun Kim