Samsung Electronics Co., Ltd.

Tae-Kyoung Kim

Chung-Sam Jun

Yun-Jung Jee

Jae-young Choi

Chung-sam Jun

Seon-mi Yoon

Soon-ho Kim

Sun-Yong Choi

Jeong-Hyun Choi

Hak-joon Lee

Kyoung-Su Shin

Yu-sin Yang

Kwang-Soo Kim

Hyun-Suk Choi

Hyesoon Jeong

Dong-Chun Lee

Kyu-Chul Kong

Koung-Su Shin

Songgeun Kim

Various embodiments of the present disclosure relate to a method and an apparatus for processing displaying of a display which includes a main region and a sub region in an electronic device. According to various embodiments of the present disclosure, it includes a display including a main region of a front and a sub region of at least one side extending from the main region and displaying an image based on at least part of the main region and the sub region, a memory, and a processor functionally coupled with the display and the memory, wherein the processor may be configured to sense at least part of the main region, generate imitation information for an extension screen based on the sensed region, and display the extension screen in the sub region in association with a main screen of the main region based on the imitation information. Various embodiments are possible.

Electronic device and displaying method thereof

The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.

Wafer holder and wafer conveyor equipped with the same

Carbon-containing nickel-particle powder is provided. The carbon-containing nickel-particle powder has improved shrinkage property when fired due to the presence of carbon. Also, the carbon-containing nickel-particle powder has a very restricted degree of forming agglomerates.

Carbon containing nickel particle and conductive paste

In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.

Method of forming a three-dimensional image of a pattern to be inspected and apparatus for performing the same

Carbon-containing nickel-particle powder and method for manufacturing the same

Wafer holder and wafer conveyor system equipped with the same

A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Method of measuring and controlling concentration of dopants of a thin film

A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Method of measuring a concentration of a material and method of measuring a concentration of a dopant of a semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Tae-Kyoung Kim