Samsung Electronics Co., Ltd.

Tae Kang Kim

Tae Hun Kim

Yong Kim

Yeon Ho Kim

Ki Seok Kim

Chan Mook Lim

Ju Heon Yoon

A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode

A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.

Method of manufacturing semiconductor light emitting device

Growing community of inventors

Yongin-si, South Korea

Tae Kang Kim