Hyundai Electronics Industries Co. Ltd.

Tae Jung Yeo

Woo Bong Lee

Yung M Koo

Jae Wan Ko

Se Jun Oh

Se Jeong Kim

Jae Wan Koh

Taek Ki Hong

An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.

Electrostatic discharge protecting transistor

The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.

High voltage cut-off semiconductor device

Method for fabricating electrostatic discharge protecting transistor

Growing community of inventors

Bubaleub, South Korea

Tae Jung Yeo