Skhynix Inc.

Industry-University Cooperation Foundation Hanyang University

Seoul National University

Tae Jung Ha

Jeong Hwan Song

Soo Gil Kim

Ha Young Lee

Tae Joo Park

Tae Jun Seok

Byung Joon Choi

Hye Rim Kim

Hyun Seung Choi

Hyung Woo Kim

Kyung Wan Kim

A semiconductor device that includes: first conductive lines; second conductive lines disposed over the first lines to be spaced apart from the first lines; and a selector layer disposed between the first lines and the second lines and including a dielectric material and a dopant doped with a uniform dopant profile.

Semiconductor device and method for fabricating the same

Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.

Method of operating selector device, method of operating nonvolatile memory apparatus using the same, electronic circuit device including selector device, and nonvolatile memory apparatus

An electronic device may include a semiconductor memory structured to include a plurality of memory cells, wherein each of the plurality of memory cells may comprise: a first electrode layer; a second electrode layer; and a selection element layer disposed between the first electrode layer and the second electrode layer to electrically couple or decouple an electrical connection between the first electrode layer and the second electrode layer based on a magnitude of an applied voltage or an applied current with respect to a threshold magnitude, wherein the selection element layer has a dopant concentration profile which decreases from an interface between the selection element layer and the first electrode layer toward an interface between the selection element layer and the second electrode layer.

Electronic device and method for fabricating the same

Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Method of operating selector device, method of operating nonvolatile memory apparatus applying the same, electronic circuit device including selector device, and nonvolatile memory apparatus

A semiconductor device may include a word line, a bit line crossing the word line, and a memory cell coupled to the word line and the bit line to receive an electrical signal to control the memory cell and including a switching material layer and an oxidation-reduction reversible material layer that is in contact with the switching material layer to allow for either oxidation reaction or reduction reaction to occur in response to different amplitudes and different polarities of the electrical signal, wherein the oxidation-reduction reversible material layer and the switching material layer responds to a first threshold voltage and a first polarity of the electrical signal to generate an oxidation interface between the switching material layer and the oxidation-reduction reversible material layer, and responds to a second threshold voltage and a second polarity of the electrical signal to reduce the generation of the oxidation interface.

Semiconductor device and method of operating the same

A cross-point array device includes a substrate, a first conductive line disposed over the substrate and extending in a first direction, a plurality of pillar structures disposed on the first conductive line, each of the pillar structure comprising a memory electrode, a resistive memory layer disposed along surfaces of the pillar structures, a threshold switching layer disposed on the resistive memory layer, and a second conductive line electrically connected to the threshold switching layer and extending a second direction that is not parallel to the first conductive line.

Cross-point array device and method of manufacturing the same

A resistance change memory device is provided. The resistance change memory device includes a lower electrode, a tunneling barrier layer disposed on the lower electrode, a resistance switching layer disposed on the tunneling barrier layer, an oxygen vacancy reservoir layer disposed on the resistance switching layer, and an upper electrode disposed on the oxygen vacancy reservoir layer. The oxygen vacancy reservoir layer is electrically conductive.

Resistance change memory device

In a method of reading a resistive memory device according to an embodiment, a memory cell including a selection element and a variable resistance element is prepared. The selection element exhibits a snap-back behavior on a current-voltage sweep curve for the memory cell. First and second read voltages to be applied to the memory cell are determined within a voltage range in which the selection element maintains a turned-on state. The magnitude of the second read voltage is less than that of the first read voltage and selected in a voltage range in which the selection element exhibits the snap-back behavior. The first read voltage is applied to the memory cell to measure a first cell current. The second read voltage is applied to the memory cell to measure a second cell current. A resistance state stored in the memory cell is determined based on the first cell current and the second cell current.

Method of reading resistive memory device

A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.

Switching device and non-volatile memory device including the same

A resistive random access memory device is provided. The resistive random access memory device includes a first electrode, a second electrode, and an electrolyte layer disposed between the first electrode and the second electrode. One of the first electrode and the second electrode includes an ion supply layer providing two or more kinds of metal ions to the electrolyte layer. The two or more kinds of metal ions have different mobilities in the electrolyte layer. Two or more conductive bridges are generated by the two or more kinds of metal ions, respectively.

Resistive random access memory device

A method of manufacturing a switching element includes forming a first electrode layer over a substrate, forming a switching structure on the first electrode layer, and forming a second electrode layer on the switching structure. The switching structure includes a plurality of unit switching layers that includes a first unit switching layer and a second unit switching layer. Forming the first unit switching layer includes forming a first unit insulation layer, and injecting first dopants into the first unit insulation layer by performing a first ion implantation process. Forming the second unit switching layer includes forming a second unit insulation layer, and injecting second dopants into the second unit insulation layer by performing a second implantation process.

Method of fabricating switching element and method of manufacturing resistive memory device

A method of sensing a resistance change memory device includes preparing a memory cell including a variable resistance element storing different data on the basis of a variable resistance, and a switching element connected to the variable resistance element and performing a threshold switching operation, measuring a first cell current by applying a first read voltage to the memory cell, the first read voltage being selected in a threshold-sensing range of a current-voltage characteristic curve of the memory cell, measuring a second cell current by applying a second read voltage to the memory cell, the second read voltage being selected in a resistance-sensing range of the current-voltage characteristic curve, and when at least one of the first cell current and the second cell current is greater than a corresponding reference current, outputting a data signal having a first logic value as data stored in the memory cell.

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Icheon, South Korea

Tae Jung Ha