Industry-university Cooperation Foundation Hanyang University

Skhynix Inc.

Ajou University Industry-academic Cooperation Foundation

Tae Jun Seok

Tae Joo Park

Dae Woong Kim

Hye Rim Kim

Dae Hyun Kim

Soo Gil Kim

Tae Jung Ha

Jeong Hwan Song

Sang Woon Lee

Hyunsoo Jin

Hyun Seung Choi

Daewoong Kim

Ji Hyeon Choi

Jae Hyun Yoon

Provided is a preparation method for a thermoelectric composite. The preparation method for a thermoelectric composite comprises the steps of: preparing a base substrate containing a first binary metal oxide; and providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second biliary metal oxide resulting from the reaction of the metal precursor and the reaction material, wherein in the step of forming the material film, a 2-dimensional electron gas is generated between the base substrate and the material film as the material film is formed on the base substrate.

Thermoelectric composite, preparation method therefor, and thermoelectric device and semiconductor device each comprising thermoelectric composite

A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).

Memory device and manufacturing method therefor

Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Method of operating selector device, method of operating nonvolatile memory apparatus applying the same, electronic circuit device including selector device, and nonvolatile memory apparatus

A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.

Transition metal-dichalcogenide thin film and manufacturing method therefor

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Yongin, South Korea

Tae Jun Seok