Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Tae Jun Kim

Su Yeol Lee

Dong Woo Kim

Jong Ho Lee

Myung Jun Park

Jang Yeol Lee

Seok Beom Choi

Hyoun Soo Shin

In Joon Pyeon

Hyun Ju Park

Sang Heon Han

Bang Won Oh

Doo Go Baik

Keun Man Song

Jin Chul Kim

Chang Zoo Kim

Yoo Sun Song

A multilayer ceramic electronic component includes: a ceramic body including dielectric layers and a plurality of internal electrodes disposed to face each other with each of the dielectric layers interposed therebetween; and external electrodes disposed on external surfaces of the ceramic body and electrically connected to the internal electrodes, respectively, wherein the external electrode includes an electrode layer electrically connected to the internal electrodes and a conductive resin layer disposed on the electrode layer, and a sum of thicknesses of the electrode layer and the conductive resin layer in a cross section of the ceramic body in the first and second directions is 12 &#x3bc;m or more.

Multilayer ceramic electronic component

There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Nitride semiconductor light emitting device and method of manufacturing the same

A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

Vertical type nitride semiconductor light emitting device and method of manufacturing the same

A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

Vertical gallium nitride based light emitting diode with multiple electrode branches

The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

Fabrication method of multi-wavelength semiconductor laser device

Disclosed herein is a chip on board lead package for optical mice and lens cover for the same. A semiconductor chip on board package for optical mice has a board, a semiconductor chip, at least one circuit pattern, at least one bonding wire, and a lens cover. The board has top and bottom surfaces, and a pair of via holes. The semiconductor chip is attached to a center portion on the top surface of the board and provided with a plurality of electrode terminals. The circuit pattern is formed on the top surface of the board. The bonding wire electrically connects the electrode terminals of the semiconductor chip with the circuit pattern. The lens cover encloses the top surface of the board and has a lens disposed on the same axis as that of the semiconductor chip, a plurality of electrode pins formed at positions of the lens cover corresponding to the positions of the via holes in the board to be integrated with the lens cover, and an opening formed in a center portion within the lens cover.

Chip on board package for optical mice and lens cover for the same

Growing community of inventors

Gyunggi-do, South Korea

Tae Jun Kim