Samsung Electronics Co., Ltd.

Tae-Joon Park

In-seak Hwang

Yoon-Ho Son

Dae-Hyuk Chung

Byoung-Yong Gwak

Tae-ho Hwang

Mong-sup Lee

Byung-Ho Kwak

Yoon-Kyung Kim

Sang-Hyun Choi

Jin-Ho Noh

Byung-Sul Ryu

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.

Semiconductor devices having plug insulators

A method of fabricating a semiconductor device includes forming a first preliminary gate barrier layer and a first preliminary gate electrode recessed to have a first depth from the surface of the substrate within a gate trench, removing an upper portion of the first preliminary gate electrode by means of a first wet etching process using a first etchant to form a second preliminary gate electrode recessed to have a second depth greater than the first depth, and removing an upper portion of the first preliminary gate barrier layer and an upper portion of the second preliminary gate electrode by means of a second wet etching process using a second etchant to form a gate electrode and a gate barrier layer recessed to a third depth greater than the second depth.

Method of fabricating semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Tae-Joon Park