Industry-university Cooperation Foundation Hanyang University

Ajou University Industry-academic Cooperation Foundation

Hyundai Motor Company

Skhynix Inc.

Kia Corporation

Tae Joo Park

Dae Woong Kim

Tae Jun Seok

Sang Woon Lee

Hye Rim Kim

Joo Young Kim

Dae Hyun Kim

Soo Gil Kim

Seong Hwan Kim

Jung Han Yu

Tae Jung Ha

Sung Min Kim

Jeong Hwan Song

Min Ji Lee

Hae Jun Jung

Hyunsoo Jin

Ji Hyeon Choi

Jae Hyun Yoon

Daewoong Kim

Kyu Moon Kwon

Ji Won Han

Hyun Seung Choi

Hye Ju Kim

A method for manufacturing an electrode structure is provided. The method for manufacturing an electrode structure comprises the steps of: preparing a base substrate; forming an amorphous seed layer covering the base substrate; crystallizing the seed layer; and covering the crystallized seed layer and forming a functional film for a secondary battery inherently having a crystalline structure.

Electrode structure and manufacturing method thereof

Disclosed are a catalyst for an electrochemical cell and a method of manufacturing the catalyst. The catalyst includes a support, a first catalyst supported on the support, wherein the first catalyst is a catalyst for hydrogen oxidation reaction (HOR) or oxygen reduction reaction (ORR), a second catalyst supported on the first catalyst, wherein the second catalyst is a catalyst for oxygen evolution reaction (OER), and a protective layer formed on the first catalyst and the second catalyst.

Catalyst for electrochemical cell and method of manufacturing same

Provided is a preparation method for a thermoelectric composite. The preparation method for a thermoelectric composite comprises the steps of: preparing a base substrate containing a first binary metal oxide; and providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second biliary metal oxide resulting from the reaction of the metal precursor and the reaction material, wherein in the step of forming the material film, a 2-dimensional electron gas is generated between the base substrate and the material film as the material film is formed on the base substrate.

Thermoelectric composite, preparation method therefor, and thermoelectric device and semiconductor device each comprising thermoelectric composite

A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).

Memory device and manufacturing method therefor

A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.

Method for selectively manufacturing material layer and target pattern

Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.

Resistive switching element and memory device including the same

Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Method of operating selector device, method of operating nonvolatile memory apparatus applying the same, electronic circuit device including selector device, and nonvolatile memory apparatus

A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.

Transition metal-dichalcogenide thin film and manufacturing method therefor

A solar cell is provided. The solar cell includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type disposed on the first semiconductor layer, an anti-reflection layer on the second semiconductor layer, and a negative charge layer between the anti-reflection layer and the second semiconductor layer.

Solar cell and method of fabricating the same

Growing community of inventors

Gwangju, South Korea

Tae Joo Park