Samsung Electronics Co., Ltd.

Tae Jin Yim

Jong Min Baek

Byung Hee Kim

Thomas Oszinda

Nae In Lee

Deok Young Jung

Viet Ha Nguyen

Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (&#x2014;CH) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.

Methods for fabricating semiconductor devices including surface treatment processes

Semiconductor devices including an interconnection structure are provided. The devices may include an etch stop layer on a lower structure including a contact structure, a buffer layer on the etch stop layer, an intermetal insulating layer including a low-k dielectric material on the buffer layer. The intermetal insulating layer may include a first region having a first dielectric constant and a second region having a second dielectric constant different from the first dielectric constant. The device may also include interconnection structure including a plug portion electrically connected to the contact structure and an interconnection portion on the plug portion. The plug portion may include a first portion extending through the etch stop layer and a second portion that is in the intermetal insulating layer and has a width greater than a width of the first portion. The interconnection portion may include opposing lateral surfaces surrounded by the intermetal insulating layer.

Semiconductor devices having interconnection structure

Growing community of inventors

Yongin-si, South Korea

Tae Jin Yim