Hyundai Electronics Industries Co. Ltd.

Tae Jin Kim

Gyu Seog Cho

Soo Won Lee

Kyung Seok Oh

Doo Hyun Lee

The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, and the present invention uses both an oxide and a nitride pattern as an etch mask instead of the single oxide pattern in order to decrease the under cut of the edge of the oxide pattern.

Method for fabricating a laser diode

The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, having the steps for forming current blocking layers on the resulting structure of the mesa structure and then forming an opening through the current blocking layer on the mesa structure.

A holographic interference exposing device using a visible laser source and a chopper to easily align the optical system while confirming the light path of the laser beam with the naked eye. The exposing device comprises a main laser source generating a short wavelength laser beam, a beam splitter for splitting the laser beam into two laser beams to cause a difference in the light path of the laser beam and to form an interference fringe on a semiconductor substrate, mirrors for guiding the laser beam to the beam splitter, and mirrors for focusing the two laser beams on a surface of the semiconductor substrate, an auxiliary laser source generating a long wavelength laser beam, and a chopper making the light path of the long wavelength laser beam get together with that of the short wavelength laser beam. The auxiliary laser source generates a visible laser beam having a wavelength longer than that of an ultraviolet laser beam.

Growing community of inventors

Kyoungkido, South Korea

Tae Jin Kim