Skhynix Inc.

Hynix Semiconductor Inc.

Tae Jin Hwang

Yong Ju Kim

Hyung Soo Kim

Ic Su Oh

Hee Woong Song

Ji Wang Lee

Hae Rang Choi

Sung Woo Han

Chang Kun Park

Jae Min Jang

Kun Woo Park

Jong Woon Kim

Seong Hwi Song

Dong Hyun Kim

Kwan Su Shon

Yo Han Jeong

Eun Ji Choi

Chang Kyu Choi

Dae Han Kwon

Hae Kang Jung

Jun Yong Song

Hyun Bae Lee

Soon Young Kang

Sun Ki Cho

Dong Uc Ko

Doo Bock Lee

Jung Hyun Shin

Woo Jin Kang

Yang Ho Sur

Soon Ku Kang

Min Sung Cheon

Sung Gil Jang

Hee Wong Song

A buffer circuit configured to receive first and second input signals through first and second input transistors coupled to a first power voltage node, output a first output signal through a first output node and a second output signal through a second output node based on the first and second input signals. A load circuit is coupled among the first output node, the second output node, and a second power voltage node and a resistance value is adjusted based on at least one of the first and second output signals.

Buffer circuit

A voltage generator includes a bias voltage generation circuit and a compensation circuit. The bias voltage generation circuit generates a first bias voltage based on a reference current and generates a second bias voltage based on the first bias voltage. The compensation circuit changes a voltage level of the first bias voltage based on the second bias voltage.

Voltage generator, semiconductor apparatus and semiconductor system using the voltage generator

An input/output circuit includes a data buffer group configured to buffer data received through data lines, a data strobe buffer configured to buffer a data strobe signal to output a buffered data strobe clock, a digitally controlled delay line configured to output delay data by controlling skew of the buffered data according to a delay code, a data strobe clock output circuit configured to generate a delay data strobe clock in response to the buffered data strobe clock, a sampler configured to sample the delay data according to the delay data strobe clock to output sampled data, and a de-skew circuit configured to update the delay code according to the sampled data.

Input/output circuit and memory device having the same

An amplifier may include a differential pair circuit configured to generate an output signal according to a first input signal and a second input signal, a plurality of current sinks coupled between a ground terminal and the differential pair circuit, and a feedback circuit configured to sense a level of the output signal and generate a feedback signal. At least one of the plurality of current sinks is controlled according to the feedback signal.

Amplifier and semiconductor apparatus using the same

A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Semiconductor memory device having pads

A buffer circuit includes an amplification unit suitable for sensing and amplifying an input signal and a reference voltage, a buffer enable unit suitable for enabling the amplification unit based on a buffer enable signal, and a buffer enable signal generation unit suitable for generating the buffer enable signal based on a first or second operation control signal, selected according to a high voltage detection signal.

Buffer circuit and operation method thereof

A calibration circuit of a semiconductor apparatus may include: a reference voltage generator suitable for generating first and second pull-up reference voltages based on a pull-up control signal, and generating first and second pull-down reference voltages based on a pull-down control signal; and a calibrator suitable for generating a pull-up resistor code corresponding to an external reference resistor based on the first and second pull-up reference voltages, and generating a pull-down resistor code corresponding to the external reference resistor based on the first and second pull-down reference voltages and the pull-up resistor code.

Semiconductor apparatus with calibration circuit and system including the same

A receiver circuit includes a first amplification unit, a second amplification unit, a first equalizing unit, and a second equalizing unit. The first amplification unit is configured to differentially amplify an input signal and a reference signal and generate a first intermediate output signal and a second intermediate output signal. The second amplification unit is configured to differentially amplify the first and second intermediate output signals and generate an output signal. The first equalizing unit is configured to control the level of the second intermediate output signal in response to the output signal. And the second equalizing unit is configured to control the level of the first intermediate output signal in response to the output signal.

Receiver circuit

A receiver circuit includes a buffering unit configured to buffer an input signal and generate a buffering signal; a variation detection unit configured to generate a control signal according to a level of a reference voltage; a driving unit configured to drive the buffering signal and generate an output signal; and a compensation unit configured to control a slew rate of the output signal in response to the control signal.

The domain crossing circuit of a semiconductor memory apparatus for improving a timing margin includes a sampler that provides a sampling internal signal generated by delaying an internal input signal by a predetermined time in response to a clock and an edge information signal that defines an output timing of the sampling internal signal and an output stage that allows the sampling internal signal to be synchronized with the clock in response to the edge information signal to be output as a final output signal.

Domain crossing circuit of a semiconductor memory apparatus

A phase detection circuit includes a phase frequency detector for comparing a first input signal and a second input signal and outputting a first phase comparison signal and a second phase comparison signal, and a sensing circuit for sensing a pulse width difference between the first phase comparison signal and the second phase comparison signal and outputting phase detection signals which have different logic values.

Phase detection circuit

An apparatus for transmitting a signal in a semiconductor integrated circuit includes a multilevel transmission control block that outputs a plurality of bits of an input signal in serial or parallel according to whether a multilevel transmission operation is performed or not, and a signal processing block that selectively performs the multilevel transmission operation according to a form of the input signal, which are output in serial or parallel from the multilevel transmission control block.

Growing community of inventors

Gyeonggi-do, South Korea

Tae Jin Hwang