Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Microsoft Technology Licensing, LLC

Lg Electronics Inc.

Hyundai Motor Company

Kia Motors Corporation

Samsung Led Co., Ltd.

Korea Institute of Science and Technology

Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Ls Mtron Ltd.

Hyundai Steel Company

Doosan Infracore Co., Ltd.

Tae Hyung Kim

Eun Joo Jang

Jeong Hee Lee

Yuho Won

Sung Woo Kim

Oul Cho

Jin A Kim

Dae Young Chung

Hyun A Kang

Hyo Sook Jang

Kwanghee Kim

Shin Ae Jun

Hongkyu Seo

Jin Woo Kim

Yongwook Kim

Moon Gyu Han

Won Sik Yoon

Yong Seok Han

Jihyun Min

Kun Su Park

Seok Hyun Yoon

Tae Ho Kim

Sujin Park

Jaejun Chang

Chan Su Kim

So Yeon Kim

Jeong Pil Choi

Sang Heon Lee

Tae Gon Kim

Seung Hun Lee

Seulong Kim

Sang Jin Lee

Shang Hyeun Park

Michael C Fanning

Jackson Michael Davis

Deukseok Chung

Eunjung Lee

Garam Park

Eun Sue Kim

Taekhoon Kim

Timothy Scott Rice

Hyeyeon Yang

Yu Seung Kim

Geun Soo Lim

Seon Ki Kim

Yong Wook Kim

Jin Hwan Kim

Cheol Kyu Kim

Dae Ig Jung

Dong Hwi Kim

Seung Jun Yu

Soo Min Lee

Kwan-ho Kim

Jaeyong Lee

Kang-Min Kim

Young Ho Kim

Seung Hwan Lee

Mi-Kyung Kim

Dong-Woo Shin

Dongwoo Shin

Jung-Hyun Cho

Il Han Park

Seung Sik Han

Chang-Woong Chu

Jung Woo Lee

Mark Eugene Russinovich

Jinseok Kim

Ho Sam Choi

Myung Hoe Kim

Eun Jung Lee

Seul-Ong Kim

Jeong Ryeol Kim

Nayoun Won

Seung Woo Choi

Mikyung Kim

Jong In Yang

William Michael Zintel

Seung Hyeok Chang

Seung Hyun Oh

Sim Chung Kang

Seong Hak Moon

Hee Sun Chun

Sang Yeob Song

Kang-min Kim

Ki Yong Lee

Eun Ju Kim

Jinwoo Jeong

Andrew R Sterland

Wan Tae Lim

Jooyeon Ahn

George Joy

Hae Young Yun

Keun Sig Lim

Brian Robert Crawford

Hong Heui Lee

Dae-hee Lee

Ravi Chandru Shahani

Byung Kun Kim

Chul Hee Yoo

A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Semiconductor nanocrystal particles and devices including the same

A display device according to some embodiments includes: a substrate; a plurality of common voltage lines positioned on the substrate; a plurality of connection electrodes positioned on a plurality of common voltage lines; an emission layer positioned on the connection electrode; and a common electrode positioned on the emission layer, wherein the emission layer has a plurality of first openings positioned on at least a portion of a plurality of connection electrodes, the common electrode is electrically connected to the connection electrode through a plurality of first openings, and a pitch of a first direction of a plurality of first openings has a range of about 0.1 mm to about 2.5 mm.

Display device and manufacturing method thereof

A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

Light emitting device, method for manufacturing the same, and electronic device including the same

An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

Electroluminescent display device including a red pixel, a green pixel, and a blue pixel

An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λ) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1λwavelength) that is less than an emission peak wavelength at the first voltage (λ@first voltage) and an emission peak wavelength at the second voltage (λ@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λ) is less than or equal to about 4 nm.

Display device and light emitting device

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Quantum dots and devices including the same

A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated with the dielectric layers interposed therebetween, and an external electrode disposed externally on the body and connected to one or more of the plurality of internal electrodes. One of the plurality of dielectric layers includes a barium titanate composition including a Sn component. One of the plurality of internal electrodes includes a Sn component. The one of the plurality of dielectric layers has a Sn content equal to at least twice a Sn content of the one of the plurality of internal electrodes adjacent to the one of the plurality of dielectric layers.

Multilayer capacitor

A multilayer electronic component includes a body including a dielectric layer including a plurality of dielectric grains and internal electrodes alternately disposed with the dielectric layer in a first direction and external electrodes disposed on the body, wherein at least one of the plurality of dielectric grains has a core-shell structure including an inner core and a shell covering at least a portion of the core, a ratio of an average size of the core to an average size of the dielectric grains having the core-shell structure is 0.4 or more and 0.8 or less, a ratio ((Dy+Tb)/Sn) of the sum of the moles of dysprosium (Dy) and the moles of terbium (Tb) to the moles of tin (Sn) included in the dielectric layer satisfies 0.7 or more and 1.5 or less, and at least one of the dielectric layers has four or more dielectric grains in the first direction.

Multilayer electronic component

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Light emitting device with electron auxiliary layer including metal oxide nanoparticles, and method of manufacturing the light emitting device, and display device

A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.

Light source, and back light unit and liquid crystal display including the light source

A multilayer capacitor includes a body including a laminate structure in which at least one first internal electrode and at least one second internal electrode are alternately stacked in a first direction with at least one dielectric layer therebetween, and first and second external electrodes spaced apart on the body, to be connected to at least one first internal electrode and at least one second internal electrode, respectively. The body includes, in a larger molar content, at least one selected from the group consisting of Dy, Tb, Y, Sm, Ho, Gd, Er, Ce, La and Nd in a capacitance formation region including a region between at least one first internal electrode and at least one second internal electrode than in a margin region including a region between a boundary line of at least one first internal electrode and at least one second internal electrode and a surface of the body.

A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.

A dielectric composition includes a BaTiO-based component as a main component, a donor component including a first element and a second element each having a shorter ionic radius and greater atomic weight than Ba, and an acceptor component including at least one of Mg, Al, Mn and V. An ionic radius of the second element is greater than an ionic radius of the first element, a molar content of the second element is less than a molar content of the first element, and a molar content of the acceptor component is greater than a molar content of the donor component.

Dielectric composition and multilayer capacitor comprising the same

An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

Electroluminescent device, manufacturing method thereof, and display device comprising the same

Growing community of inventors

Seoul, South Korea

Tae Hyung Kim