Hynix Semiconductor Inc.

Tae-Hyung Jung

Chang-Ho Do

Bok-Moon Kang

Yeon-Woo Kim

A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads; a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data, which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control at least one of the first data pads to denote a fail status based on a comparison result, during the test mode.

Semiconductor memory device, test circuit, and test operation method thereof

A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads, a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control the first data pads to denote a fail status based on a comparison result, during the test mode.

A semiconductor memory device that can minimize the area of a circuit for generating a BLEQ signal by using one power source voltage terminal floated for the generation of a BLEQ signal. The semiconductor memory device includes a power source supplier configured to supply a power source of a main power source voltage terminal to a sub-power source voltage terminal in response to a mat selection signal for selecting a corresponding memory cell mat among a plurality of memory cell mats, a bit line equalization (BLEQ) signal generator configured to be coupled with the sub-power source voltage terminal and generate a BLEQ signal corresponding to a voltage level of the sub-power source voltage terminal in response to a BLEQ control signal, and a bit line equalizer configured to precharge and equalize a bit line pair in response to the BLEQ signal.

Growing community of inventors

Santa Clara, CA, United States of America

Tae-Hyung Jung