Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yonsei University

Tae-Hyung Hwang

Hyung-Il Jeon

Sang-Il Kim

Nam-Seok Roh

Seok-Joon Hong

Seung-Hwan Cho

Keun-Kyu Song

Yu-Jin Kim

Hyun-Jae Kim

Tae-Young Choi

Joo-Han Bae

Dae-Jin Park

Son-Uk Lee

Woong-Hee Jeong

Tae-Hun Jung

Choong-Hee Lee

Chong-Chul Chai

Sung-Jin Kim

Byeong-Jin Lee

Jung-Woo Park

Soo-Wan Yoon

Ju-Han Bae

Yu Jin Kim

Do-Kyung Kim

Myung-Hwan Kim

Byeong-Seob Ban

Sung-hoon Yang

So-Woon Kim

Joon-Youp Kim

Yeon-joo Kim

Doh-Kyung Kim

Won-Ho Kim

Seong-Su Lim

Nikulin Ivan

Ivan Nikulin

A TFT substrate including a base substrate that includes a plurality of pixel areas; a gate line on the base substrate and extending in a first direction; a data line on the gate line and extending in a second direction; a TFT connected to the gate line and the data line, the TFT including a gate electrode, a semiconductor pattern, and source and drain electrodes, the semiconductor pattern overlapping the gate electrode, the source electrode and the drain electrode overlapping the semiconductor pattern, and the drain electrode being spaced apart from the source electrode; an inorganic insulating pattern covering the data line, the inorganic insulating pattern including an opening aligned with the pixel areas; a shielding electrode overlapping the data line, the shielding electrode on the inorganic insulating pattern; and a pixel electrode on the pixel areas, the pixel electrode being electrically connected to the drain electrode through a first contact hole.

Thin film transistor substrate and method of manufacturing the same

A display substrate including a base substrate, a plurality of pixel electrodes and a plurality of sub pixel electrodes. The pixel electrodes are formed on the base substrate, are spaced apart from each other, and are electrically connected with a plurality of transistors, respectively. The sub pixel electrodes are disposed between the pixel electrodes, and are electrically connected with a thin-film transistor (TFT). Thus, quality of an image displayed by the display apparatus may be enhanced.

Display substrate having sub pixel electrodes connected with thin film transistors, method of manufacturing the same, and display apparatus having the same

An electrophoretic display according to an exemplary embodiment of the present invention may include: a first substrate, a first electrode formed on the first substrate, a second electrode spaced apart from the first electrode, a second substrate facing the first substrate, and a plurality of charged particles arranged between the first substrate and the second substrate, pairs of the charged particles having different polarities. Each charged particle has at least two threshold voltages, where the threshold voltages are voltage magnitudes below which a voltage applied across the first and second electrodes does not move the associated charged particle. The pixels may represent any one of colors such as red, green, blue, white, and black by including two charged particles of different colors in one pixel and changing the attractive and repulsive force threshold voltages of each of two charged particles of different colors contained in the pixel.

Electrophoretic display and driving method thereof

Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

Local crystallization by heat treatment

A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiOand BaSO.

Flat panel display

A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.

Display apparatus and method of fabricating the same

An electrophoretic display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate; a thin film transistor disposed on the lower substrate; a pixel electrode connected to the thin film transistor; an electronic ink layer positioned between the lower substrate and the upper substrate; a plurality of partitions disposed on the upper substrate; a reflecting layer disposed on the partitions; a color filter disposed between the partitions.

Electropheretic display device and method for manufacturing the same

A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a pixel electrode disposed on the first support layer. The second substrate is opposite to the first substrate. The second substrate includes an organic insulation layer and a second support layer on which the inorganic insulation layer is deposited. The cover member covers an outer surface of the flexible panel. Thus, a display device is manufactured by using a support layer on which an organic insulation layer and an inorganic insulation layer are coated as a base substrate, so that defects generated in a manufacturing process may be prevented.

Display device and method of manufacturing the same

A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Method of forming a thin film transistor having openings formed therein

A flat panel display device displays an image using a micro-shutter electrode and a diffusive reflection layer. The display device has a wide viewing angle and reduces a loss of light to thus improve light efficiency. In addition, gray levels can be determined by an electrostatic force between the pixel electrode and the micro-shutter electrode. An opening/closing operation of the micro-shutter electrode is fast so that the response speed can be improved.

Display device

A method of compensating performance of a thin film transistor including a gate electrode, source and drain electrodes that are spaced apart from each other and insulated from the gate electrode, and an active layer to form a channel between the source and drain electrodes, includes applying a negative voltage to the gate electrode to compensate deterioration of the active layer.

Thin film transistor, method of recovering performance of the same, and liquid crystal display employing the same

Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si&#x2014;H to Si&#x2014;Hhas a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.

Method of forming amorphous silicon layer and method of fabricating LCD using the same

A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.

Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same

A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.

Growing community of inventors

Seoul, South Korea

Tae-Hyung Hwang