Samsung Electronics Co., Ltd.

Kwang-youl Seo

Tae-hyun Han

Byung-chul Kim

Chung-woo Kim

Hee-soon Chae

Joo-yeon Kim

Sanghun Kim

Junghwan Kim

Jinwook Jung

Youngduk Suh

Ohkug Kwon

Dongkyeng Han

Sangbeom Park

Kukbin Choi

A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

Semiconductor fabrication apparatus

Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Nonvolatile memory device and method of manufacturing the same

Growing community of inventors

Guri-si, South Korea

Tae-hyun Han