Samsung Electronics Co., Ltd.

Tae Hyun An

Dong Hwan Kim

Toshiro Nakanishi

Su Hwan Kim

Sung Kweon Baek

Jin Soak Kim

Eun Ae Chung

Gab Jin Nam

There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Tae Hyun An