Samsung Electronics Co., Ltd.

Tae-Hyoung Koo

Sam-jong Choi

Young-soo Park

Taesung Kim

Joon-Young Choi

Kyoochul Cho

Sun-Ha Hwang

Yeonsook Kim

Joonyoung Choi

Heesung Kim

A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.

Wafer, fabricating method of the same, and semiconductor substrate

A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100&#xb0; C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about &#x2212;70&#xb0; C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100&#xb0; C. or more.

Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same

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Suwon-si, South Korea

Tae-Hyoung Koo