Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Tae-Hwan Oh

Chang-Hoon Lee

Dong-Woon Park

Yong-Kug Bae

Jong-Su Kim

Jin-Baek Kim

Tae-Hoi Park

Boo-Hyun Ham

Young-Ho Kim

Dong-Ho Lee

Kyoung-mi Kim

Kwang-sub Yoon

Tae-sun Kim

Yun-Bo Yang

Jae-Hak Choi

Jae-Jun Lee

Yu-Ra Kim

Min-Chul Jun

Dong-Han Yoon

In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same

In an interface board for testing a multichip package, the multichip package includes a first type semiconductor chip and a second type semiconductor chip, the interface board includes a first surface facing the multichip package and a second surface facing a test apparatus, the first surface includes upper terminals that are electrically connected to terminals of the multichip package, the second surface includes lower terminals that are electrically connected to the test apparatus, and the upper terminals include a first upper terminal group for testing the first type semiconductor chip and a second upper terminal group for testing whether a crack defect exists in the second type semiconductor chip.

Interface board, a multichip package (MCP) test system including the interface board, and an MCP test method using the MCP test system

A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Methods of forming layer patterns of a semiconductor device

Provided are a semiconductor structure and a method of fabricating a semiconductor device. The method includes: preparing a substrate or an etch-target layer which is to be patterned; forming a first anti-reflective coating, which contains silsesquioxane resin and a cross-linking catalyst, on the substrate or the etch-target layer; forming an anti-penetration film and a second anti-reflective coating by causing a cross-linking reaction in a region of the first anti-reflective coating; and forming a photoresist pattern on the anti-penetration film.

Methods of forming integrated circuit devices using anti-penetration films to block acid transfer into anti-reflective coatings

A photoresist composition includes a cyclic compound, a photoacid generator, and an organic solvent. The cyclic compound includes any one selected from the group consisting of moieties having chemical structures represented by the formulae (1), (2), (3) and (4) set forth herein, and at least one moiety having the chemical structure represented by the formula (9) set forth herein.

Cyclic compound, photoresist composition and method of forming a photoresist pattern using the same

An operational amplifier includes a differential amplifier for amplifying differential input signals to generate differential amplified signals. The operational amplifier also includes first and second single-ended amplifiers that each amplify the differential amplified signals to respectively generate first and second single-ended output signals that are differential with respect to each-other.

Low voltage operational amplifier

Disclosed herein is a novel norbornene, acrylate or methacrylate monomer as a photoresist monomer containing an oxepan-2-one group. Further disclosed are photoresist compositions comprising a polymer prepared from the monomer, methods for preparing the photoresist compositions, and methods for forming photoresist patterns using the photoresist compositions.

MONOMERS CONTAINING AN OXEPAN-2-ONE GROUP, PHOTORESIST COMPOSITIONS COMPRISING POLYMERS PREPARED FROM THE MONOMERS, METHODS FOR PREPARING THE COMPOSITIONS, AND METHODS FOR FORMING PHOTORESIST PATTERNS USING THE COMPOSITIONS

Growing community of inventors

Goyang-si, South Korea

Tae-Hwan Oh