Magnachip Semiconductor, Inc.

Key Foundry Co., Ltd

Coavis

Sk Keyfoundry Inc.

Tae Hoon Lee

Jin Seong Chung

Bo Seok Oh

Yu Shin Ryu

Hyun Kwang Shin

Yon Sup Pang

Jun Hee Cho

Ji Ho Jung

Hyun Tae Lee

Joon Sup Kim

Jong Hyuk Yoon

Jong Keun Lim

Yong Hwan Choi

Yong Soo Jeon

Chan Heum Yoon

A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Provided is an apparatus for measuring a residual amount of fuel in a fuel tank using an ultrasonic sensor that may simplify wirings, may simplify an assembly method, and may respond to contraction or expansion of the tank according to a change in temperature as compared to the conventional apparatus for measuring a residual amount of fuel in a fuel tank using an ultrasonic sensor.

Apparatus for measuring residual amount of fuel in fuel tank using ultrasonic sensor

The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rby minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qfor an identical device pitch to that of an alternative technology.

Semiconductor device

A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.

Semiconductor device comprising Schottky barrier diodes

A method for manufacturing a semiconductor device includes forming a gate insulation film and a polysilicon layer on a substrate, forming a polysilicon pattern by etching the polysilicon layer, forming an opening in the polysilicon pattern that exposes a part of the polysilicon pattern by forming a mask pattern on the polysilicon pattern, forming a gate electrode by etching the part of the polysilicon pattern exposed through the opening, forming a P-type body region by ion implanting a P-type dopant onto the substrate using the gate electrode as a mask, forming an N-type LDD region on the P-type body region by ion implanting an N-type dopant onto the substrate using the gate electrode as a mask, forming a spacer on a side surface of the gate electrode, and forming an N-type source region on a side surface of the spacer.

Semiconductor device and method for manufacturing the same

Provided is a urea solution pump module including: a flange portion coupled to cover an opened mounting hole of a urea solution tank; a pump disposed near an upper surface of the flange portion; a filter formed to surround the pump, disposed to be spaced apart from the pump, and coupled to the flange portion; an internal heater disposed between the pump and the filter and coupled to the flange portion; and a first fin having one side connected to the internal heater and the other side disposed near the pump. If the urea solution received in the urea solution tank is frozen, the pump and the urea solution frozen around the pump may be quickly and efficiently thawed.

Urea solution pump module

A power semiconductor device includes a drain region and a source region disposed on a substrate, a gate insulating layer and a gate electrode disposed on the substrate and disposed between the drain region and the source region, a protection layer in contact with a top surface of the substrate and a top surface of the gate electrode, a source contact plug connected to the source region, a drain contact plug connected to the drain region, and a field plate plug in contact with the protection layer, wherein a width of the field plate plug is greater than a width of the source contact plug or a width of the drain contact plug.

Power semiconductor device and method for manufacturing the same

Provided is an apparatus for fixing a reservoir body assembly of a fuel pump module into a fuel tank. The apparatus includes: a fixed retainer fixed into the fuel tank to be integrated with the fuel tank; and a moving coupled retainer coupled with the fixed retainer in a state in which a reservoir body assembly pumping fuel in the fuel tank is disposed at an assembling location with the fixed retainer to mount the reservoir body assembly so as to fix the reservoir body assembly.

Growing community of inventors

Sejong-si, South Korea

Tae Hoon Lee