Samsung Electronics Co., Ltd.

Yonsei University

Korean Broadcasting System

Tae-Hoon Kwon

Jong-Hwan Kim

Suk-Kyun Lee

Cheol-Joong Kim

Sang-Boh Yun

Joo-Hyun Lee

Jong-Hyeuk Lee

Dae-Sik Hong

Young-Woo Suh

Ha-Kyun Mok

Jin Yong Choi

Jong Soo Seo

A method and apparatus for allocating resources for a mobile station in a communication system is provided. The method includes determining if a mobile station within a cell is located in one of a first region corresponding to a cell center, a third region corresponding to a cell edge, and a second region corresponding to an area between the first and third regions, allocating frequency resources within an entire frequency band to the mobile station when the mobile station is located in the first region, wherein the entire frequency band comprises at least a first frequency band and a second frequency band, allocating frequency resources within the first frequency band to the mobile station when the mobile station is located in the third region, and allocating frequency resources within the second frequency band to the mobile station when the mobile station is located in the second region.

Apparatus and method for allocating frequency resource in a communication system

A distributed translator and an operation method of the distributed translator are proposed. The distributed translator includes: a demodulator demodulating a received signal to extract a transport stream and synchronization information from the received signal; a modulator generating an output frame based on the synchronization information to modulate the output frame; and a transmitter transmitting the modulated output frame according to a transmission timing.

Distributed translator with received signal synchronization and method thereof

A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

Methods of manufacturing complementary bipolar transistors

Integrated injection logic devices including injection regions and tub or sink regions

A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

Complementary bipolar transistors

Growing community of inventors

Seoul, South Korea

Tae-Hoon Kwon