Korea Photonics Technology Institute

Tae Hoon Chung

Hyung Jo Park

Jong-Hyeob Baek

Sang-Mook Kim

Seong-Ran Jeon

Seung-Jae Lee

Jong Hyeob Baek

Ja Yeon Kim

Hwa Seop Oh

Sung-Chul Choi

Yoon Seok Kim

Dae Woo Jeon

Jin Woo Ju

Sang Hern Lee

Tak Jung

A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.

Nitride semiconductor light-emitting device, and method for manufacturing same

The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

Method for manufacturing a group III nitride substrate using a chemical lift-off process

Growing community of inventors

Gwangju, South Korea

Tae Hoon Chung