Samsung Electronics Co., Ltd.

Tae-hong Ha

Seong-hwee Cheong

Jun-Bum Lee

A method of fabricating a semiconductor device, can be provided by forming gate structures for transistors on a semiconductor substrate in a cell region and in a peripheral circuit region. An offset spacer can be formed including a first material on the gate structures. A first ion implantation can be done using the gate structures and the offset spacer as an ion implantation mask to form source/drain regions. A material layer can be formed including a second material on the semiconductor substrate and on the gate structures. A material layer can be formed of a third material, having an etch selectivity with respect to the second material, on the material layer of the second material. An etch-back can be performed the material layer comprising the third material in the cell region and in the peripheral region, to simultaneously expose the source/drains region in the peripheral region and not expose the source/drain regions in the cell region.

Growing community of inventors

Suwon-si, South Korea

Tae-hong Ha