Samsung Electronics Co., Ltd.

Tae-Hoi Park

Chang-Hoon Lee

Yong-Kug Bae

Dong-Woon Park

Tae-Hwan Oh

Jong-Su Kim

Boo-Hyun Ham

Yool Kang

So-Ra Han

Hyung-rae Lee

Hyoung-hee Kim

Kyung-hwan Yoon

In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same

A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Method of manufacturing semiconductor device using acid diffusion

Growing community of inventors

Hwaseong-si, South Korea

Tae-Hoi Park