Hynix Semiconductor Inc.

Tae Ho Shin

You Sung Kim

Joong Seob Yang

Jun Seop Chung

A non-volatile memory device includes a memory cell array and a controller. The memory cell array includes memory cells for data storage and a plurality of flag cells. The flag cells indicate program states of the memory cells for each of a plurality of word lines. The controller determines the program states of the memory cells by employing the flag cells and controls a pass voltage provided to a corresponding word line according to the determined program states.

Non-volatile memory device and method of operating the same

A non-volatile memory device is disclosed. The non-volatile memory device includes an encoder configured to set random data in a unit of a word line, and generate second data to be programmed in a memory cell by performing logic operation about the random data and first data inputted for program, and a data converting circuit configured to have a decoder for generating the first data by performing logic operation about the second data read from the memory cell and the random data.

Growing community of inventors

Icheon-si, South Korea

Tae Ho Shin