Samsung Display Co., Ltd.

Skhynix Inc.

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Korea Research Institute of Chemical Technology

Other

Lg Chem, Ltd

Kia Motors Corporation

Kia Corporation

Korea University Research and Business Foundation

Kookmin University

Cheil Industries Inc.

Samsung Sds Co., Ltd.

Silicon Works Co., Ltd.

Solid, Inc.

Tae Ho Kim

Keun Chan Oh

Chang-Hun Lee

Myung Ho Lee

Jin Ho Park

Hyeon Min Bae

Myung Geun Song

In Gon Yang

Eun Joo Jang

Chang Ho Kim

Tae Hyung Kim

Sung Woo Kim

Sung H Hong

Tae Young Kim

Hyo Sook Jang

Jin A Kim

Jae Young Choi

Seung Jun Lee

Sunyoung Park

Sang Jin Lee

Jeong Hee Lee

Dae Young Chung

Su Jeong Kim

Moon Gyu Han

Yong Su Lee

Oul Cho

Yong Bok Lee

Jin Sung Kim

Hae Chan Park

Seung Hwan Cho

Young Dug Kim

Oh Jeong Kwon

Takahiro Fujiyama

Sun-kyu Joo

Won Sik Yoon

In Ju Lee

Jaejun Chang

Kun Su Park

Jeong Ho Park

Su Lyun Sung

Ha Il Kwon

Dong Gyu Noh

Hahk Rel Noh

Jong Rok Park

Dae Sung Hwang

Hongkyu Seo

So Youn Park

Mi Suk Kim

Daisuke Inoue

Si Heun Kim

Jae Hyeon Shin

Sungmook Lim

Mi Hwa Lee

Chang Hun Lee

Jong Geon Jegal

Joon Yeong Lee

Gi Young Kim

Young Taik Hong

Sung Yeon Hwang

Nam Soo Lee

Woo Yong Cho

Dong Yeop Oh

Deok Woo Park

Jaehong Park

Cho Rong Ryu

Chan Su Kim

Jeong Hee Park

Fumiaki Kato

Min Hee Kim

Chang Ha Lee

Masashi Tsuji

Norihito Ishii

Heejae Lee

Hyo Sup Won

Tae Jun Lee

Yong Hwan Moon

Kyoung Ku Ha

Hong Seok Yang

Yusaku Konishi

Naotoshi Suganuma

Jae Won Ha

Jong Sung Lee

Sung Cheoul Kim

Sang Min Jeon

Hong Yeon Lee

Hyo Gon Kim

Sang Hun Jeon

Hyeon Woo Park

Min Tak Lee

Kyung Ho Park

Sung Jae Lee

Yong Tae Park

Soonmin Cha

Bum Jin Kim

Min Hyun Jung

Chang Se Woo

Kung Won Rhie

Je Young Park

Hee Jae Kim

Byung Hwa Oh

A display device includes a circuit layer including emission pixel drivers, and data lines transferring data signals of the emission pixel drivers; a data driver generating the data signals of the emission pixel drivers; and a demultiplexer circuit electrically connected between the data driver and the data lines and including a first demultiplexer transistor turned on by a first demultiplexer control signal and a second demultiplexer transistor turned on by a second demultiplexer control signal. A first data line of the data lines is electrically connected to the data driver through the first demultiplexer transistor and a transfer path shorter than a first extension length. A second data line of the data lines is electrically connected to the data driver through the second demultiplexer transistor and a transfer path longer than or equal to the first extension length.

Display apparatus

A display device including: a substrate; a plurality of light-emitting elements on the substrate; and a touch sensing layer disposed on the plurality of light-emitting elements, wherein the touch sensing layer includes: a first touch conductive layer; a first insulating layer disposed on the first touch conductive layer; and a second touch conductive layer disposed on the first insulating layer, and wherein the first insulating layer includes a light-converting material that converts light into near-infrared light.

Display device with integrated fingerprint sensing and light conversion features

An air foil bearing includes a sleeve that defines a hollow portion having an irregular curvature, where the hollow portion is configured to receive a rotor, a bump foil that is disposed at an inner peripheral surface of the sleeve, and a top foil that is disposed at the bump foil.

Air foil bearing and method for manufacturing the same

A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R, R, R, X, X, and Arare as provided herein.

Copolymer, electroluminescence device material including copolymer, and electroluminescence device

Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

Etching composition

An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

Electroluminescent device, manufacturing method thereof, and display device comprising the same

A method for simulating sharpness of an image boundary including setting a boundary pattern including a boundary line between black and white, and a unit pattern including arrangement information of pixels; calculating simulation grayscale data for implementing the boundary pattern by using the unit pattern; and obtaining a sharpness index for the boundary line based on a contrast sensitivity function (CSF) and brightness data extracted from the simulation grayscale data.

Method and apparatus for simulating sharpness of image boundary

A device for registering and authenticating a user device for vehicle control includes: a communication unit connected to the user device to receive an authentication request from the user device; an interface configured to communicatively connect with at least one antenna included in the vehicle and communicating with a FOB of the vehicle; and a processor configured to detect whether the user device is registered based on at least one of user information and device information included in the received authentication request, to detect whether a user of the user device has the FOB by using the at least one antenna, and to control a registration process of the user device which is set differently depending on whether the user has the FOB when the user device is not registered.

Apparatus and method for registration and authentication of user equipment for controlling vehicle

A rotor-cooling structure is for a drive motor including an inner shaft, a rotor shaft surrounding the inner shaft, a rotor connected to the rotor shaft, and a stator disposed to be spaced apart from the rotor. The rotor-cooling structure includes: a first flow passage formed in the inner shaft; a second flow passage formed in the rotor shaft to receive oil through the first flow passage; a third flow passage formed in a plate disposed at an end of a rotor core, constituting the rotor, to be connected to the second flow passage; and a fourth flow passage formed to be connected to the third flow passage and to penetrate the rotor core in the direction in which core plates constituting the rotor core are stacked.

Rotor-cooling structure of a drive motor

A semiconductor memory device includes a resistive change memory device including a control circuit block and a plurality of memory decks electrically connected with the control circuit block. The semiconductor memory device includes a pattern generation block, a position correction block and a position decision block. The pattern generation block receives a row address, a column address and a deck selection signal to generate a plurality of pattern generation signals to select a plurality of memory cells in the memory deck in various patterns. The position correction block receives a temporary code for classifying the memory cells into a temporary near cell region and a temporary far cell region and for reflecting a position of the memory deck in the temporary code to output a correction code. The position decision block is configured to generate first to third reset signals to reset a near cell region, a middle cell region and a far cell region based on the pattern generation signals and the correction code.

Semiconductor memory device, semiconductor memory system including the same, method of driving the semiconductor memory system

A memory device includes a page buffer, a voltage generator, and a test controller. The page buffer is connected to a memory cell through a bit line, and is configured to sense a threshold voltage of the memory cell through a potential of a sensing node electrically connected to the bit line. The voltage generator is configured to generate a test voltage to be applied to the sensing node. The test controller is configured to control the voltage generator to apply the test voltage to the sensing node, and detect a defect of the page buffer, based on a leakage current value of the sensing node.

Page buffer, memory device including the page buffer and operating method thereof

A biodegradable composite material which is produced by polymerizing a mixture of an aqueous dispersion of a natural polymer nanofiber including any one or more of a chitin nanofiber and a cellulose nanofiber, a dicarboxylic acid or a derivative thereof, and a diol. The biodegradable composite material has excellent biodegradable and mechanical properties.

Biodegradable composite material having improved mechanical properties using natural polymer nanofiber aqueous dispersion and method of producing the same

A memory device capable of reducing a peak current includes a plurality of memory cell strings each including a plurality of memory cells connected between a common source line and a bit line, a source select line connected between the common source line and the plurality of memory cells, and a drain select line connected between the bit line and the plurality of memory cells. A method for operating the memory device includes: precharging channel regions of a plurality of memory cell strings through a common source line; and setting a bit line voltage applied to the bit line, after starting precharging the channel regions of the plurality of memory cell strings, while the channel regions of the plurality of memory cell strings are being precharged.

Memory device and operating method thereof

Provided herein is a semiconductor memory device and a method of operating the same. The semiconductor memory device includes a memory block, a peripheral circuit, and a control logic. The memory block includes a plurality of sub-blocks coupled to a plurality of source select lines, respectively. The peripheral circuit performs a program operation on the memory block. The control logic is configured to control the peripheral circuit to increase a voltage of a common source line that is coupled to the memory block, increase a voltage of at least one source select line, among the plurality of source select lines, to a first voltage level, and set a voltage of a bit line that is coupled to the memory block and increase the voltage of at least one source select line from the first voltage level to a second voltage level.

Semiconductor memory device and method of operating the same

Growing community of inventors

Gyeonggi-Do, South Korea

Tae Ho Kim