Skhynix Inc.

Tae Ho Jeon

Won Sun Park

Duck Ju Kim

Jae Won Cha

Sung Hoon Ahn

In Gon Yang

A semiconductor memory device includes a memory cell array configured to include memory cells, peripheral circuits configured to read out data stored in a selected memory cell in a read operation, and a controller configured to control the peripheral circuits so that the peripheral circuits sense a voltage level of the bit line when a first read voltage of the read voltages is supplied to the word line and the peripheral circuits sense voltage levels of the bit line when a second read voltage lower than the first read voltage by a specific level and a third read voltage higher than the first read voltage by the specific level are supplied to the word line in order to determine whether a threshold voltage of the selected memory cell falls within a set voltage distribution in the read operation.

Semiconductor memory device and method of reading out the same

A semiconductor device includes a first operation circuit configured to generate addition data by adding a column address and a page address and output a remainder obtained by dividing the addition data by a set value as seed data, a mask data output circuit configured to output mask data corresponding to the respective seed data, and a second operation circuit configured to generate random data by performing a logic operation on the mask data and program data corresponding to the column and page addresses.

Semiconductor device and method of generating random data

A semiconductor memory device includes memory cells arranged at regions where word lines and bit lines cross each other; a randomizing and de-randomizing circuit configured to perform a first randomizing operation on data to be programmed to the memory cells, based on a seed value, so as to generate first randomized data; a data reading/writing circuit configured to perform a second randomizing operation on the first randomized data using a data inverting operation so as to generate second randomized data and program the second randomized data to the memory cells; and a control logic configured to control the randomizing and de-randomizing circuit and the data reading/writing circuit.

Growing community of inventors

Goyang-si, South Korea

Tae Ho Jeon