Samsung Electronics Co., Ltd.

Tae-Heung Ahn

Yu-sin Yang

Sang-kil Lee

Byeong-hwan Jeon

Woo-seok Ko

Byeong Hwan Jeon

Jun Bum Park

Young-hoon Sohn

Hyoung-jo Jeon

Sung-yoon Ryu

Gil-woo Song

Young Duk Kim

Kang-woong Ko

Masahiro Horie

Jong Min Yoon

Nam Il Koo

In Keun Baek

Ik Seon Jeon

Sang Gil Park

Yoichiro Iwa

Ki Wan Seo

Su Hwan Park

Racine Nassau

Sang-kyeong Han

Provided is an apparatus for measuring a wafer. The apparatus may include a chuck disposed on a stage and a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame. The apparatus may further include first to third adsorption portions connected with the horizontal frame and configured to adsorb the wafer, a support bar penetrating through the chuck and extending in a first direction and a beam irradiator connected to the support bar and disposed between the plate and the horizontal frame. The beam irradiator may be configured to irradiate a beam on the wafer. The apparatus may further include a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after it has penetrated through the wafer.

Apparatus for measuring wafer

An inspection apparatus includes a light source. A first measurement unit is configured to receive light from the light source and direct it to a first measurement object. A second measurement unit is configured to receive the light from the light source and direct it to a second measurement object. An inspection unit is configured to receive a first optical signal provided from the first measurement unit and inspect the first measurement object using the first optical signal, and to receive a second optical signal provided from the second measurement unit and inspect the second measurement object using the second optical signal. A measurement position selection unit is configured to alternately enable the inspection of the two measurement units by adjusting an angle of a reflection mirror.

Apparatus for inspecting material property of plurality of measurement objects

A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Surface inspecting method

Growing community of inventors

Seoul, South Korea

Tae-Heung Ahn