Skhynix Inc.

Tae Heui Kwon

Hyun Sik Jeong

Sang Jo Seo

You Sung Kim

Won Jae Choi

Hwang Huh

A memory device includes plural non-volatile memory cells and a control circuit. The plural non-volatile memory cells can store data and are arranged in series between a bit line and a source line. The control circuit synchronizes discharge of charges, which are accumulated in a channel formed by the plural non-volatile memory cells, through the bit line and the source line during an erase operation for erasing the data stored in the plural non-volatile memory cells.

Apparatus and method for erasing data in a non-volatile memory device

A memory device includes a memory block and a peripheral circuit. The memory block includes a first word line group of word lines included in the memory block and a second word line group of the word lines included in the memory block. The word lines of the first word line group are different from the word lines of the second word line group. The peripheral circuit provides the first word line group and the second word line group with an equalizing voltage during an equalizing section overlapping an erase voltage discharging section for the memory block to constantly keep voltages of the first word line group and the second word line group to the equalizing voltage.

Memory device and operating method of the memory device

A semiconductor memory apparatus may include a cell string and a page buffer. The cell string may include a drain select transistor coupled with a bit line, and memory cells coupled with the drain select transistor. The page buffer may be coupled to the cell string through the bit line. The page buffer may include a latch and a first current path. The latch may store data of a value indicative of a result of a threshold voltage verification on the drain select transistor. The first current path may set a voltage of the bit line to a program inhibit voltage, based on the value of the data stored in the latch.

Semiconductor memory device

A semiconductor memory device includes: a memory cell for storing data; a page buffer connected to the memory cell through a bit line, to store data in the memory cell or read data from the memory cell; and a cache latch connected to the page buffer through a bus node. When bit data transmission operation between the page buffer and the cache latch is performed, the bus node is discharged before starting the bit data transmission operation.

A memory device controls a page buffer to ensure the reliability of data. The memory device includes: a memory cell array including a plurality of memory cells configured for storing data; first and second page buffers respectively including main latches and cache latches, which are coupled to a bus, the first and second page buffers being connected to the memory cell array respectively through bit lines coupled to the main latches; and control logic including a bus precharge controller for differently setting a voltage level of the bus, based on a distance between a reference position and the first page buffer and a distance between the reference position and the second page buffer, for precharging of the bus for transmitting data of a cache latch included in each of the first and second page buffers to a corresponding main latch.

There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a potential level switch circuit suitable for outputting an internal voltage having an internal power potential level or a negative potential level in response to the control signal, and a voltage apply circuit suitable for outputting a block selecting signal having a high potential level higher than the internal power potential level in response to the control signal and the internal voltage having the internal power potential level, or outputting the internal voltage having the negative potential level as the block selecting signal in response to the control signal.

Block decoder and semiconductor memory device having the same

In one example, a voltage generator includes a plurality of voltage pumps, a voltage detection circuit, an oscillator, and a control circuit. The plurality of voltage pumps are configured to perform voltage pumping operations in a sequence and output a pumping voltage. The voltage detection circuit is configured to detect a voltage level of the pumping voltage and output a detection signal. The control circuit is configured to output, in response to the detection signal, a plurality of divided oscillator signals based on an oscillator signal of the oscillator, to enable a different one of the voltage pumps to begin each sequence of voltage pumping operations each time the pumping voltage is less than a threshold voltage.

Voltage generators and systems

Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage regulator configured to generate a second negative voltage using the first negative voltage and output the second negative voltage through an output terminal. The negative voltage regulator includes a first amplifier circuit configured to be controlled by a voltage of the output terminal, and a voltage booster configured to increase a voltage of the output terminal depending on an output voltage of the first amplifier circuit.

Memory device having negative voltage generator

A semiconductor memory device includes a standby voltage providing unit. The standby voltage providing unit is configured to receive an external voltage, primarily clamp and secondarily clamp a predetermined voltage, and provide the predetermined voltage as an internal voltage, during a standby mode.

Semiconductor memory device for reducing standby current

A semiconductor memory device and a method of manufacturing the same are provided. The device includes a memory block and one or more peripheral circuits. The memory block includes a bit line, a common source line, a vertical channel layer coupled between the bit line and the common source line, word lines surrounding the bit line at different heights from a semiconductor substrate, and memory cells formed in portions where the word lines surround the vertical channel layer. The one or more peripheral circuits are configured to set the word lines to a floating state to supply holes to the vertical channel layer when a precharge voltage is applied to the common source line, and set word lines of memory cells to be erased to a ground state when an erase voltage is applied to the common source line.

Semiconductor memory device and method of operating the same

A semiconductor memory device includes word lines stacked over a substrate having a plurality of memory block regions, select lines arranged over the word lines, vertical channel layers formed to penetrate through the select lines and the word lines and extending to the substrate, and a charge trap layer disposed between the word lines and the vertical channel layers, wherein the stacked word lines are separated by memory block groups that each include two or more memory block regions.

A semiconductor memory device includes a charge pump circuit for generating a pass pump voltage in response to a clock signal and a pump enable signal and a regulator circuit for maintaining the pass pump voltage in the same level as a program pass voltage during a program operation and discharging the program pass voltage during a verification operation so that the program pass voltage has the same level as a verification pass voltage.

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Seoul, South Korea

Tae Heui Kwon