Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Lg Electronics Inc.

Tae-Han Kim

Young-Sun Shin

Jin-Sun Park

Young-chan Kim

Min-Seok Oh

Eun-Sub Shim

Seung-sik Kim

Dong-Joo Yang

Moo-Sup Lim

Kang-Doo Kim

Min-Kyung Choi

Seung-Mok Lee

Kyung-Eon Lee

In-Hyuk Song

Sang-Hoon Lee

Ji-Won Lee

Won-Ho Lee

Su-hyeon Kim

Dae-je Chin

Jong-Seo Hong

Woo-Sung Lee

Man-Sug Kang

Ho-Young Jeong

Keum-Joo Lee

Ju-Un Park

Seong-Ki Jeong

Kyu-Tae Kim

In-jung Ha

Jo-Kyun Park

Moo-Sub Lim

Air purifier

Air conditioner

An organic light-emitting display device includes: a substrate, light-emitting elements on the substrate, and a light control layer structure between an anode of each of the light-emitting elements and the substrate, the light control layer structure including at least one pair of an alternately stacked low refractive index layer and high refractive index layer, a lowest high refractive index layer contacting an upper surface of the substrate.

Organic light-emitting display device

Discussed are a transparent display device and a manufacturing method thereof, which may reduce diffraction grating. The transparent display device includes gate lines and data lines formed on a substrate and crossing each other with a gate insulator film interposed therebetween to define pixel areas, common lines formed on the substrate and being parallel to the gate lines, thin film transistors formed in the respective pixel areas, pixel electrodes connected to the thin film transistors, and common electrodes connected to the common lines and alternating with the pixel electrodes. In the transparent display device, blocks between the pixel electrodes and the common electrodes are reduced or increased in width by an equal difference with increasing distance from both edges of each pixel area proximate to the data lines or by an equal difference with decreasing distance to the center of the pixel area.

Transparent display device and manufacturing method thereof

Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

Pixel arrays of image sensors, and image sensors including the pixel arrays

Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.

Image sensor and method of manufacturing the same

A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Image sensor and method of correcting output signal of the image sensor based on signals from different pixel rows

A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value.

Image sensor and method of correction output signal of the image sensor

Growing community of inventors

Seoul, South Korea

Tae-Han Kim