Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Electronics and Telecommunications Research Institute

Seoul National University

Industry-university Cooperation Foundation Hanyang University

Dongwoo Fine-chem Co., Ltd.

Chung Ang University Industry Academic Cooperation

Samsung Sdi Co., Inc.

Tae-Gon Kim

Yun-Sang Park

Tae-Hyung Kim

Bong-Gee Song

Seoung-jae Im

Han-Mei Choi

In-hyoung Kim

Soon-Young Yoon

Ji-Yun Seol

Jae-Yong Lee

Ki-chul Kim

Ki-Hyun Hwang

Jae-young Ahn

Bong-jin Kuh

Kwang-Soon Kim

Kyung-In Choi

Jeong-yun Lee

Sang-Hoon Sung

Jae-Yul Ryu

Wan-Uk Choi

Jae-Hwan Chang

Joong-Ho Jeong

Jea-Woan Lee

Kyung-Hi Chang

Joon-Sup Kim

Yong-Soo Cho

Sanguk Park

Jun-Kyu Yang

Jeong-Hee Lee

Jong-Hoon Kang

Min-Cheol Park

In-Hyoung Kim

Kyung-Yub Jeon

Yuichiro Sasaki

Jun-Kyu Kang

Sang-Hoon Han

Sun-jung Kim

Seung-Hee Park

Eun-Young Jo

Byunghoon Lee

Kyung-Sun Kim

Hyun-Chul Song

Changyoung Jeong

Hae-Dong Yeon

Young-Hak Kim

Jinho Ahn

In-Chun Lim

In-Seop Byun

Shunichi Kubota

Young-Sic Kim

Hun-Sik Kim

Seo-Goo Lee

Seul-Ki Park

Shin-Hoo Kang

Seung-joo Kim

Hisaki Tarui

Hyun-tae Kim

Young-Soo Kwon

Jin Goo Park

Hong-Shik Shin

Seung-jae Im

Hye-won Kim

Hee-Joon Chun

Young-Chang Lim

Seoung-Jae Im

Chang-Kuen Back

The present disclosure provides a partition wall for an image display device, the partition wall which satisfies 0.8≤A/B<1.0 and 0.85≤C/B<1.0 when the line width at a thickness of 95% from the lowermost end portion of the partition wall is A, the maximum line width at a thickness of 50 to 90% from the lowermost end portion of the partition wall is B, and the line width at a thickness of 10% from the lowermost end portion of the partition wall is C, with respect to the total thickness of the partition wall, a manufacturing method thereof, and an image display device including the partition wall. The partition wall for an image display device according to the present disclosure can be effectively applied to the manufacture of the color conversion pixels through the inkjet process, and the image display device including the partition wall has excellent luminance and maintains high luminance even when observed from the side surface, thereby exhibiting an effect of excellent viewing angle properties.

Barrier rib for image display device, manufacturing method therefor, and image display device comprising barrier rib

A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.

Pellicle cleaning apparatus and pellicle cleaning method using the same

A method of manufacturing a semiconductor device, the method including forming dummy gate structures on a substrate; forming spacers on sidewalls of the dummy gate structures; forming a preliminary first interlayer insulation pattern to fill a gap between adjacent spacers; etching an upper portion of the preliminary first interlayer insulation pattern through a first etching process to form a preliminary second interlayer insulation pattern; implanting an ion on the dummy gate structures, the spacers, and the preliminary second interlayer insulation pattern through an ion-implanting process; etching an upper portion of the preliminary second interlayer insulation pattern through a second etching process to form an interlayer insulation pattern having a flat upper surface; and forming a capping pattern on the interlayer insulation pattern to fill a gap between the spacers.

Methods of manufacturing a semiconductor device

A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Semiconductor devices

A visible light sensitive photocatalyst including a compound represented by Formula 1:SiO&#x2003;&#x2003;Formula 1wherein A is one or more metals selected from Ag, Cu, and Au; Mis one or more metals selected from Li, Na, K, Rb, and Cs; Mis one or more metals selected from Ge, Sn, Ti, Zr, and Hf, and 1.7&#x2266;a&#x2266;2.3, 0.7&#x2266;b&#x2266;1.3, 2.7&#x2266;c&#x2266;3.3, 0&#x2266;x&#x3c;a, and 0&#x2266;y&#x3c;b.

Visible light sensitive photocatalyst, method of producing the same, and electrochemical water decomposition cell, water decomposition system, and organic material decomposition system each including the same

According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.

Method of fabricating semiconductor device having preliminary stacked structure with offset oxide etched using gas cluster ion

A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.

Method of manufacturing semiconductor device having doped layer

An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Etching apparatus and etching method

An alignment mark is formed on a substrate including a first region and a second region. The alignment mark is formed in the second region. An etch target layer including a crystalline material is formed on the alignment mark and the substrate. The etch target layer in the first region is partially amorphized. The amorphized etch target layer is etched to form an opening.

A method and apparatus for recovering an estimated velocity of a mobile station in a communication system are provided. The apparatus includes a searcher for determining a Doppler shift value representing the estimated velocity of the mobile station by using a channel impulse response of a preamble signal received at a regular interval of time, a detector for determining a reference Doppler value for compensating the Doppler shift value by using correlation ratios between channel values of symbols to which data for the mobile station are allocated according to subcarriers in a data allocation field of a frame including the preamble signal, and a compensator for determining a compensated Doppler shift value by using the reference Doppler value to compensate the Doppler shift value for a folding value, wherein the folding value represents a difference between the estimated velocity and a true velocity of the mobile station.

Method and apparatus for recovering estimated velocity of mobile station in communication system

A nitride phosphor represented by Formula 1:MCeMMNO,&#x2003;&#x2003;Formula 1wherein Mis at least one metal selected from the group consisting of Sc, Y, Lu, La, Pr, Sm, Gd, Tb, Yb, Dy, Eu, and Bi, Mis at least one metal selected from the group consisting of Siand Ge, Mis at least one metal selected from the group consisting of Al3+, B3+, and Ga3+, a is equal to or greater than about 1.8 and equal to or less than about 2.2, b is equal to or greater than about 3.8 and equal to or less than about 4.2, c is equal to or greater than about 6.7 and equal to or less than about 7.3, x is equal to or greater than about 0.7 and less than about 3, y is equal to or greater than 0 and less than about 3, and z is greater than 0 and less than about 1.

Nitride phosphor, method of preparing the same, and white light-emitting device using the same

A thin layer structure includes a substrate, a blocking pattern that exposes part of an upper surface of the substrate, and a single crystalline semiconductor layer on the part of the upper surface of the substrate exposed by the pattern and in which all outer surfaces of the single crystalline semiconductor layer have a &#x3c;100&#x3e; crystallographic orientation. The thin layer structure is formed by an SEG process in which the temperature is controlled to prevent migration of atoms in directions towards the central portion of the upper surface of the substrate. Thus, sidewall surfaces of the layer will not be constituted by facets.

Method of forming a thin layer structure

A green phosphor, has an orthorhombic structure of a Pnma space group and the Formula 1:(MD)MOA&#x2003;&#x2003;[Formula 1]wherein Mis magnesium, calcium, strontium, barium, and any combination thereof, D is at least one of metal selected from the group consisting of europium, manganese, antimony, cerium, praseodymium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, bismuth, and any combination thereof, Mis at least one selected from the group consisting of silicon, germanium, aluminum, gallium, and any combination thereof, A is at least one selected from the group consisting of chlorine, fluorine, bromine, iodine, and any combination thereof, and 2.7&#x2266;p&#x2266;3.3, 0.7&#x2266;q&#x2266;1.3, 3.5&#x2266;r&#x2266;4.5, 1.7&#x2266;s&#x2266;2.3, and 0&#x3c;x&#x2266;0.1. A method of preparing the green phosphor is disclosed, and a white light-emitting device including the green phosphor. The white light-emitting device has good thermal stability.

Green phosphors, methods of preparing the green phosphors, and white light-emitting devices including the green phosphors

An oxynitride phosphor including: a compound represented by Formula 1:MMCeSiAlON,&#x2003;&#x2003;Formula 1

Oxynitride phosphor, method of preparing oxynitride phosphor, and white light emitting device including the oxynitride phosphor

Provided is an (oxy)nitride phosphor, which is a compound represented by Formula 1 below:{MEu}SiON&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

(Oxy) nitride phosphor, white light-emitting device including the (oxy) nitride phosphor, method of preparing phosphor, and nitride phosphor prepared by the method

Growing community of inventors

Seoul, South Korea

Tae-Gon Kim