Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Korea Institute of Industrial Technology

University of Pennsylvania

Samsung Corning Precision Glass Co., Ltd.

Other

University of California

Samsung Displayco., Ltd.

Samsung Led Co., Ltd.

Samsung Dispaly Co., Ltd.

Display Co., Ltd.

Tae Gon Kim

Shin Ae Jun

Shang Hyeun Park

Garam Park

Taekhoon Kim

Nayoun Won

Eun Joo Jang

Deukseok Chung

Jooyeon Ahn

Mi Hye Lim

Jongmin Lee

Hyeyeon Yang

Hyo Sook Jang

Ha Il Kwon

Sung Ho Cho

Yuho Won

Sung Hun Lee

Seok Woo Lee

Hyo Young Kim

Yongwook Kim

Dong-Yoon So

Kyong Tae Park

Yong Kim

Min Jong Bae

Young Sun Kim

Cherie Renee Kagan

Hyunki Kim

Ji-Yeong Kim

Ji Yong Park

Seonmyeong Choi

Nuri Oh

Tianshuo Zhao

Kubota Shunichi

Sung Jun Park

Tae Hyung Kim

Sang Heon Lee

Jae Ho Lee

Jeong Hee Lee

Hyun A Kang

Yong Wook Kim

Christopher Bruce Murray

Oul Cho

Soo Kyung Kwon

Seok Hyun Nam

Seon-Yeong Kim

A Ra Jo

Bong Soo Kim

Seung Hyun Song

Jae-Sic Lee

Taek Hoon Kim

Yuichiro Sasaki

Kyung In Choi

Young Seok Park

Yu Hyun Cho

Dong Chin Lee

Alexander Schmidt

Byoung Ki Choi

Abraham Yoo

Seoung Jae Im

Suk Jin Lee

Kyung Hee Park

Eun Mi Jeong

Yoshiya Moriyama

Heung Soon Lee

Christopher J Murray

Su Jin Kim

Se-Ho Kim

Armand Paul Alivisatos

Chun Gi You

Han Soo Kim

Chung Yi

Hyun Sik Park

Jinyoung Hwang

Junghwa Kim

Sung Jin Yang

Tae Won Jeong

Jin-Yup Kim

Dongjin Yun

Mi Jin Yoon

Min Ho Chae

Dong Yoon So

Il Han Lee

Young-soo Jeong

Yehonadav Bekenstein

Dong Hoon Jeong

Hyeonsu Heo

Ji Whan Kim

Seung Jae Im

Sue In Chae

Hyokeun Park

Young Mo Sung

A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

Quantum dot, composition for preparing quantum dot composite, quantum dot composite, and display panel

A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

Display panel and production method thereof

A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.

Layered structures and electronic devices including the same

A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation:≤about 0.6

Display panel and electronic device including the same

A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

Core shell quantum dot and electronic device including the same

A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.04:1.

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Nanocrystal particles and processes for synthesizing the same

A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.

Luminescent nanostructure, and color conversion panel and electronic device including the same

A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

Quantum dot having a phosphorus precursor in a multi-component core

A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

Quantum dots and composite and display device including the same

A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

Quantum dots and devices including the same

Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Quantum dots, a composition or composite including the same, and an electronic device including the same

A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.

Color filters and devices including the same

A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

Quantum dot composite and electronic device including the same

A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Quantum well nanocrystals with quaternary alloy structure for improved light absorption

Growing community of inventors

Seoul, South Korea

Tae Gon Kim