Samsung Sdi Co., Inc.

Tae-Geun Kim

Young-Min Kim

Duck-Chul Hwang

Sang-Min Lee

Young-Ugk Kim

Sang-Eun Park

Young-Jun Lee

Young-Hwan Kim

Seung-Ho Na

Ung-Kuk Heo

Deuk-Hwa Lee

A silicon-based negative active material that includes a core including silicon oxide represented by SiO(0&#x3c;x&#x3c;2); and a coating layer including metal oxide, and the metal of the metal oxide includes aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and/or molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases to the center of the core, and an atom % concentration of an oxygen (O) element increases to the center, and a depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core.

Silicon-based negative active material, preparing method of preparing same and rechargeable lithium battery including same

Growing community of inventors

Yongin-si, South Korea

Tae-Geun Kim