Samsung Electronics Co., Ltd.

Tae Eung Yoon

Jaekyu Lee

Kiseok Suh

Eric R Fossum

Seungjae Lee

Ju Youn Kim

Jin-Wook Kim

Yoon Dong Park

Sunhom Steve Paak

Doyoung Choi

Yoondong Park

Se Ki Hong

Dongho Cha

Junemo Koo

Seonguk Park

Sangjun Choi

Hoon Sang Oh

Jung Hoon Seo

Ihara Hisanori

HyungJin Bae

Kyoung Hwan Yeo

Hyung Jin Bae

Tae Won Ha

Seul Gi Yun

Suk Pil Kim

HoonSang Oh

Sungkwon Hong

Ruiyi Chen

A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.

Semiconductor device

Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern.

Semiconductor device and method of manufacturing the same

A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.

Methods of manufacturing semiconductor devices

An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.

Image sensor

Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Image sensors having multiple photoelectric conversion devices therein

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Seoul, South Korea

Tae Eung Yoon