Instytut Wysokich Cisnien Polskiej Akademii Nauk

Topgan Sp. Z O.o.

Inst. Wysokich Cisnien Polskiej Akademii Nauk

Instytut Wysokich Ciśnień Polskiej Akademi Nauk

Instytut Chemi Fizycznej Polskiel Akademii Nauk

Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk

Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk

Instyut Wysokich Cisnien Polskiej Akademii Nauk

Instytut Chemii Fizycznej Polskiejakademii Nauk

Top-gan Spolka Z Ograniczona Odpowiedzialnoscia

Tadeusz Suski

Sylwester Porowski

Piotr Perlin

Izabella Grzegory

Michal Leszczynski

Szymon Stanczyk

Czeslaw Skierbiszewski

Michal Leszczyński

Robert Czernecki

Michal Bockowski

Stanislaw Krukowski

Miroslaw Wroblewski

Jan Jun

Jan Weyher

Agnieszka Kaminska

Kafar Anna

Anna Nowakowska-Siwinska

Boleslaw Lucznik

Marcin Sarzynski

Anna Kafar

Elzbieta Litwin-Staszewska

Szymon Grzanka

Jacek Baranowski

Henryk Teisseyre

Michal Boćkowski

Przemyslaw Wiśniewski

Anna Feduniewicz-Zmuda

Marcin Siekacz

Marcin Sarzyński

Igor Dziecielewski

Robert Holyst

Anna Nowakowska-Szkudlarek

Katarzyna Holc

The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0&#xb0; to 10&#xb0;.

AlInGaN-based superluminescent diode

The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

AlInGaN alloy based laser diode

A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.

Substrate for epitaxial growth

The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.

Substrate for surface enhanced raman scattering studies

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

The subject of the Invention is the method of fabrication of nitride semiconductor A,B,such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors. The method according to the Invention is characterized by the fact that the homoepitaxial or heteroepitaxial layers of nitride semiconductors A,B,are deposited on the conductive substrate after the introductory processing or isolating substrate, and after that the so prepared structures are located in high pressure diffusional chamber filled with the one or multi-component gas, compressed to pressure in the range 1000-20000 bar, and annealed in the temperature 1000-1800 &deg; C. in the prescribed time in the presence of the dopant from the external and/or internal source.

Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity

The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700&deg; C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10&deg; C./cm.

Method of fabrication of highly resistive GaN bulk crystals

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Nowy Prazmów, Poland

Tadeusz Suski