Murata Manufacturing Co., Ltd.

Tadayuki Okawa

Keiichi Umeda

Taku Kamoto

Yoshihiro Koshido

Yuichi Goto

Masayuki Suzuki

Yoshihisa Inoue

Makoto Tose

Yuji Toyota

Junko Izumitani

Takehiko Kishi

Koji Yoshida

Yuki Fukui

Ryoichiro Takahashi

Kei Fujibayashi

A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.

MEMS device

A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.

Resonance device

A mounting substrate that includes external connection electrodes on a rear surface of a base material, and mounting electrodes on a front surface of the base material. In-hole electrodes connect the external connection electrodes and the mounting electrodes. A reflective film containing Al is located between the base material and the mounting electrodes. The reflective film is covered with an insulating film layer.

Mounting substrate

Method of manufacturing a circuit board

A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO.sub.2, Sm.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Y.sub.2 O.sub.3, TiO.sub.2, Al.sub.2 O.sub.3, and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned.

Method of forming dielectric thin film pattern and method of forming

Growing community of inventors

Nagaokakyo, Japan

Tadayuki Okawa